Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling by Dumas, P., Julliard, P.-L., Borrel, J., Duguay, S., Hilario, F., Deprat, F., Lu, V., Zhao, W., Zou, W, Arevalo, E., Blavette, D.

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Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework by Julliard, P.L., Johnsson, A., Zographos, N., Demoulin, R., Monflier, R., Jay, A., Er-Riyahi, O., Monsieur, F., Joblot, S., Deprat, F., Rideau, D., Pichler, P., Hémeryck, A., Cristiano, F.

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Low temperature carbon co-implantation in silicon: Defects suppression and diffusion modeling by Dumas, P., Julliard, P.-L., Borrel, J., Duguay, S., Hilario, F., Deprat, F., Lu, V., Zhao, W., Zou, W, Arevalo, E., Blavette, D.

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Clusters of Defects as a Possible Origin of Random Telegraph Signal in Imager Devices: a DFT based Study by Jay, A., Hemeryck, A., Cristiano, F., Rideau, D., Julliard, P.L., Goiffon, V., LeRoch, A., Richard, N., Samos, L. Martin, Gironcoli, S. De

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Implant heating contribution to amorphous layer formation: a KMC approach by Julliard, P.L., Dumas, P., Monsieur, F., Hilario, F., Rideau, D., Hemeryck, A., Cristiano, F.

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