Search Results - KAGUCHI, Naoto

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  1. 1
    Species responsible for Si–H2 bond formation in a-Si:H films deposited using silane high frequency discharges

    Species responsible for Si–H2 bond formation in a-Si:H films deposited using silane high frequency discharges by Shiratani, Masaharu, Koga, Kazunori, Kaguchi, Naoto, Bando, Kouki, Watanabe, Yukio

    Published in Thin solid films
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  2. 2
    Cluster-eliminating filter for depositing cluster-free a -Si:H films by plasma chemical vapor deposition

    Cluster-eliminating filter for depositing cluster-free a -Si:H films by plasma chemical vapor deposition by Koga, Kazunori, Kaguchi, Naoto, Bando, Kouki, Shiratani, Masaharu, Watanabe, Yukio

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  3. 3
    Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS?

    Which is harder SOA test for SiC MOSFET to do Unclamped Inductive Switching (UIS) or Unloaded Short Circuit mode Switching (USCS)? Does UIS play a role of USCS? by Hasegawa, Kazuhiko, Taguchi, Kensuke, Kagawa, Yasuhiro, Suekawa, Eisuke, Kaguchi, Naoto, Ata, Yasuo, Haruguchi, Hideki, Nakashima, Yu, Minato, Tadaharu

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  4. 4
    Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si–H2 bonds in the films

    Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si–H2 bonds in the films by Koga, Kazunori, Kaguchi, Naoto, Shiratani, Masaharu, Watanabe, Yukio

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  5. 5
    Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si–H 2 bonds in the films

    Correlation between volume fraction of clusters incorporated into a-Si:H films and hydrogen content associated with Si–H 2 bonds in the films by Koga, Kazunori, Kaguchi, Naoto, Shiratani, Masaharu, Watanabe, Yukio

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  6. 6
    Species responsible for Si–H 2 bond formation in a-Si:H films deposited using silane high frequency discharges

    Species responsible for Si–H 2 bond formation in a-Si:H films deposited using silane high frequency discharges by Shiratani, Masaharu, Koga, Kazunori, Kaguchi, Naoto, Bando, Kouki, Watanabe, Yukio

    Published in Thin solid films
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  7. 7
    Cluster-eliminating filter for depositing cluster-free a -Si:H filmsby plasma chemical vapor deposition

    Cluster-eliminating filter for depositing cluster-free a -Si:H filmsby plasma chemical vapor deposition by Koga, Kazunori, Kaguchi, Naoto, Bando, Kouki, Shiratani, Masaharu, Watanabe, Yukio

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  8. 8
    Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges

    Species responsible for Si-H2 bond formation in a-Si:H films deposited using silane high frequency discharges by SHIRATANI, Masaharu, KOGA, Kazunori, KAGUCHI, Naoto, BANDO, Kouki, WATANABE, Yukio

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