Search Results - KASUKAWA, Toshio

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  1. 1
    Filling of Deep-sub-µm Through Holes and Trenches by High Vacuum Planar Magnetron Sputter

    Filling of Deep-sub-µm Through Holes and Trenches by High Vacuum Planar Magnetron Sputter by ASAMAKI, Tatsuo, KATO, Takao, SAITO, Shigeru, KASUKAWA, Toshio, GEKA, Hayato, MOTOHASHI, Kenichi

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  2. 2
    高真空スパッタによる微細孔の埋込

    高真空スパッタによる微細孔の埋込 by 麻蒔, 立男, 加藤, 隆男, 斉藤, 茂, 粕川, 敏夫, 外賀, 早矢土, 本橋, 研一

    Published in Electrochemistry
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  3. 3
    Safety and efficacy of granulocyte and monocyte adsorption apheresis in patients with active ulcerative colitis: A multicenter study

    Safety and efficacy of granulocyte and monocyte adsorption apheresis in patients with active ulcerative colitis: A multicenter study by Shimoyama, Takashi, Sawada, Koji, Hiwatashi, Nobuo, Sawada, Toshio, Matsueda, Kei, Munakata, Akihiro, Asakura, Hitoshi, Tanaka, Takao, Kasukawa, Reiji, Kimura, Ken, Suzuki, Yasuo, Nagamachi, Yukio, Muto, Tetsuichiro, Nagawa, Hirokazu, Iizuka, Bun-ei, Baba, Shozo, Nasu, Masaru, Kataoka, Tatsuji, Kashiwagi, Nobuhito, Saniabadi, Abby R.

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  4. 4
    Frequency of clonally expanded T cells evaluated by PCR from a single cell

    Frequency of clonally expanded T cells evaluated by PCR from a single cell by Kurokawa, Manae, Furukawa, Hiroshi, Yabe, Toshio, Matsui, Toshihiro, Toda, Masaaki, Hamada, Chikuma, Kasukawa, Reiji, Yamamoto, Kazuhiko, Nishioka, Kusuki, Kato, Tomohiro

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  5. 5
    A novel binder suitable for cationic electrodeposition coatings based on a non-isocyanate chemistry

    A novel binder suitable for cationic electrodeposition coatings based on a non-isocyanate chemistry by Fujibayashi, Toshio, Kasukawa, Takahisa, Morimoto, Kazuyuki

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  6. 6
    Erythrocytapheresis for Plasmodium falciparum infection complicated by cerebral malaria and hyperparasitemia

    Erythrocytapheresis for Plasmodium falciparum infection complicated by cerebral malaria and hyperparasitemia by Zhang, Y., Telleria, L., Vinetz, J.M., Yawn, D., Rossmann, S., Indrikovs, A.J.

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  7. 7
    1. 3 [mu]m InAs[sub y]P[sub 1[minus]y]--InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

    1. 3 [mu]m InAs[sub y]P[sub 1[minus]y]--InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition by Kasukawa, Akihiko, Namegaya, Takeshi, Fukushima, Toru, Iwai, Norihiro, Kikuta, Toshio

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  8. 8
    1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes

    1.48 mu m high-power GaInAsP-InP graded-index separate-confinement-heterostructure multiple-quantum-well laser diodes by Namegaya, Takeshi, Katsumi, Ryuichi, Iwai, Norihiro, Namiki, Shu, Kasukawa, Akihiko, Hiratani, Yuji, Kikuta, Toshio

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