Modeling and experimental verification of the 300 mm Ar anneal process by Müller, T., Wahlich, R., Krottenthaler, P., Studener, J., Kühhorn, A., Ammon, W.v.

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Upper yield point of large diameter silicon by Fischer, A., Richter, H., Shalynin, A., Krottenthaler, P., Obermeier, G., Lambert, U., Wahlich, R.

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Mechanical strength of 300 mm diameter silicon wafers at high temperatures: modeling and simulation by Fischer, A., Grabolla, Th, Richter, H., Obermeier, G., Krottenthaler, P., Wahlich, R.

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Modeling and experimental verification of the 300mm Ar anneal process by Müller, T., Wahlich, R., Krottenthaler, P., Studener, J., Kühhorn, A., Ammon, W.v.

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A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device by Richter, R., Trentzsch, M., Dunkel, S., Muller, J., Moll, P., Bayha, B., Mothes, K., Henke, A., Mazur, M., Paul, J., Krottenthaler, P., Poth, J., Jansen, S., Huselitz, R., Kim, H., Zaka, A., Herrmann, T., Bazizi, E.M., Beyer, S., Ghazavi, P., Om'mani, H., Lemke, S., Tkachev, Y., Zhou, F., Kim, J., Liu, X., Tiwari, V., Do, N.

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Upper yield point of large diameter silicon by FISCHER, A, RICHTER, H, SHALYNIN, A, KROTTENTHALER, P, OBERMEIER, G, LAMBERT, U, WAHLICH, R

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