Search Results - Kaiblinger-Grujin, G

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  1. 1
    Ionized-Impurity Scattering of Majority Electrons in Silicon

    Ionized-Impurity Scattering of Majority Electrons in Silicon by Kosina, H., Kaiblinger-Grujin, G.

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  2. 2
    Influence of the doping element on the electron mobility in n-silicon

    Influence of the doping element on the electron mobility in n-silicon by Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.

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  3. 3
    Study of dopant-dependent band gap narrowing in compound semiconductor devices

    Study of dopant-dependent band gap narrowing in compound semiconductor devices by Palankovski, V, Kaiblinger-Grujin, G, Selberherr, S

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  4. 4
    Response to “Comment on ‘Influence of the doping element on the electron mobility in n -silicon’ ” [J. Appl. Phys. 85 , 7984 (1999)]

    Response to “Comment on ‘Influence of the doping element on the electron mobility in n -silicon’ ” [J. Appl. Phys. 85 , 7984 (1999)] by Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.

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  5. 5
    An Improved Ionized Impurity Scattering Model forMonte Carlo Calculations

    An Improved Ionized Impurity Scattering Model forMonte Carlo Calculations by Kaiblinger-Grujin, G., Kosina, H.

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  6. 6
    Reexamination of Electron Mobility Dependence on Dopants in GaAs

    Reexamination of Electron Mobility Dependence on Dopants in GaAs by Kopf, Ch, Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.

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  7. 7
    Influence of dopant species on electron mobility in InP

    Influence of dopant species on electron mobility in InP by Kopf, Ch, Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.

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  8. 8
    A new approach to ionized-impurity scattering

    A new approach to ionized-impurity scattering by Kosina, H., Kaiblinger-Grujin, G., Selberherr, S.

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  9. 9
    Monte Carlo simulation of electron transport in doped silicon

    Monte Carlo simulation of electron transport in doped silicon by Kaiblinger-Grujin, G., Kosina, H., Selberherr, S.

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