Estimation of the chemical materials volumes required for the post-growth technology manufacturing InGaP/GaAs/Ge with a concentrator and planar α–Si:H/Si solar cells for 1 MW solar... by Kontrosh, L.V., Kalinovsky, V.S., Khramov, A.V., Kontrosh, E.V.

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Native defect concentration in Czochralski-grown Te-doped GaSb by photoluminescence by Vlasov, A.S., Rakova, E.P., Khvostikov, V.P., Sorokina, S.V., Kalinovsky, V.S., Shvarts, M.Z., Andreev, V.M.

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Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells by Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A

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Evaluation of the conversion efficiency of thin-film single-junction characteristics by Andreev, A.A, Andreev, V.M, Kalinovsky, V.S, Pokrovsky, P.V, Terukov, E.I

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Fabrication and study of p-n structures with crystalline inclusions in the space-charge region by Kalinovsky, V. S., Levin, R. V., Pushniy, B. V., Mizerov, M. N., Rumyantsev, V. D., Andreev, V. M.

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The recombination and tunnel current in GaAs-based solar cells: effect of radiation by Kalinovsky, V.S., Andreev, V.M., Evstropov, V.V., Khvostikov, V.P., Lantratov, V.M.

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