Search Results - Kambour, K. E.

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  1. 1
    Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

    Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices by Hjalmarson, Harold P., Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Devine, Roderick A.B.

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  2. 2
    A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors

    A Physics-Based Device Model of Transient Neutron Damage in Bipolar Junction Transistors by Keiter, Eric R, Russo, T V, Hembree, C E, Kambour, K E

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  3. 3
    Tunneling discharge of positive trapped oxide charge in p-channel field effect transistors

    Tunneling discharge of positive trapped oxide charge in p-channel field effect transistors by Kambour, K. E., Kouhestani, C., Nguyen, D., Rosen, N., Devine, R. A. B.

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  4. 4
    Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type

    Dependence of the Multi-Component Nature of Bias Temperature Instability in MOSFETs on Oxide and Device Type by Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Devine, Roderick A.B.

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  5. 5
    Measurement and Identification of Three Contributing Charge Terms in Negative Bias Temperature Instability

    Measurement and Identification of Three Contributing Charge Terms in Negative Bias Temperature Instability by Mayberry, Clay, Nguyen, Duc D., Kouhestani, Camron, Kambour, Kenneth E., Hjalmarson, Harold P., Devine, Roderick A.B.

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  6. 6
    Comparison of NTBI and irradiation induced interface states

    Comparison of NTBI and irradiation induced interface states by Kambour, K. E., Nguyen, D. D., Kouhestani, C., Devine, R. A. B.

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  7. 7
    High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

    High Temperature Annealing of the Interface State Component of Negative-Bias Temperature Instability (NBTI) in MOSFET Devices by Nguyen, Duc, Kambour, Kenneth, Kouhestani, Camron, Hjalmarson, Harold P., Devine, Roderick A.B.

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  8. 8
    On the nature of "permanent" degradation in NBTI

    On the nature of "permanent" degradation in NBTI by Nguyen, D. D., Kouhestani, C., Kambour, K. E., Devine, R. A. B.

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  9. 9
    Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS

    Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS by Nguyen, D. D., Kouhestani, C., Kambour, K. E., Bersuker, G., Devine, R. A. B.

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  10. 10
    Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices

    Similarities between Ionizing Radiation Effects and Negative-Bias Temperature Instability (NBTI) in MOSFET Devices by Hjalmarson, Harold Paul, D. D. Nguyen, K. E. Kambour, C. Kouhestani, R. A. B. Devine

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  11. 11
    Measurement and modeling of duty-cycle effects due to NBTI

    Measurement and modeling of duty-cycle effects due to NBTI by Kambour, K. E., Nguyen, D. D., Kouhestani, C., Devine, R. A. B.

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  12. 12
    Estimation in partially linear models

    Estimation in partially linear models by Eubank, R.L., Kambour, E.L., Kim, J.T., Klipple, K., Reese, C.S., Schimek, M.

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