Examination of defects and the seed's critical thickness in HVPE-GaN growth on ammonothermal GaN seed by Sochacki, Tomasz, Amilusik, Mikolaj, Fijalkowski, Michal, Iwinska, Malgorzata, Lucznik, Boleslaw, Weyher, Jan L., Kamler, Grzegorz, Kucharski, Robert, Grzegory, Izabella, Bockowski, Michal

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Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds by Sochacki, Tomasz, Amilusik, Mikolaj, Lucznik, Boleslaw, Fijalkowski, Michal, Weyher, Janusz Ludwik, Sadovyi, Bohdan, Kamler, Grzegorz, Nowak, Grzegorz, Litwin-Staszewska, Elzbieta, Khachapuridze, Aleksander, Grzegory, Izabella, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Bockowski, Michal

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Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy by Teisseyre, Henryk, Domagala, Jaroslaw Zbigniew, Lucznik, Boleslaw, Reszka, Anna, Kowalski, Bogdan Jerzy, Bockowski, Michal, Kamler, Grzegorz, Grzegory, Izabella

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Refractive Index of Heavily Germanium-Doped Gallium Nitride Measured by Spectral Reflectometry and Ellipsometry by Schiavon, Dario, Mroczyński, Robert, Kafar, Anna, Kamler, Grzegorz, Levchenko, Iryna, Najda, Stephen, Perlin, Piotr

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Analysis of Vertical GaN JBS and p-n Diodes by Mg Ion Implantation and Ultrahigh-Pressure Annealing by Stein, Shane R., Khachariya, Dolar, Mecouch, Will, Mita, Seiji, Reddy, Pramod, Tweedie, James, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramon, Pavlidis, Spyridon

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Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing by Khachariya, Dolar, Stein, Shane, Mecouch, Will, Breckenridge, M. Hayden, Rathkanthiwar, Shashwat, Mita, Seiji, Moody, Baxter, Reddy, Pramod, Tweedie, James, Kirste, Ronny, Sierakowski, Kacper, Kamler, Grzegorz, Bockowski, Michal, Kohn, Erhard, Pavlidis, Spyridon, Collazo, Ramón, Sitar, Zlatko

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Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor by Stein, Shane R., Khachariya, Dolar, Mita, Seiji, Breckenridge, M. Hayden, Tweedie, James, Reddy, Pramod, Sierakowski, Kacper, Kamler, Grzegorz, Boćkowski, Michał, Kohn, Erhard, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Chemical Vapor Deposition of Monolayer MoS 2 on Chemomechanically Polished N-Polar GaN for Future 2D/3D Heterojunction Optoelectronics by Sengupta, Rohan, Vaidya, Shipra, Szymanski, Dennis, Khachariya, Dolar, Bockowski, Michal, Kamler, Grzegorz, Reddy, Pramod, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Chemical Vapor Deposition of Monolayer MoS2 on Chemomechanically Polished N‑Polar GaN for Future 2D/3D Heterojunction Optoelectronics by Sengupta, Rohan, Vaidya, Shipra, Szymanski, Dennis, Khachariya, Dolar, Bockowski, Michal, Kamler, Grzegorz, Reddy, Pramod, Sitar, Zlatko, Collazo, Ramón, Pavlidis, Spyridon

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Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds by Sochacki, Tomasz, Bryan, Zachary, Amilusik, Mikolaj, Collazo, Ramon, Lucznik, Boleslaw, Weyher, Jan L, Nowak, Grzegorz, Sadovyi, Bogdan, Kamler, Grzegorz, Kucharski, Robert, Zajac, Marcin, Doradzinski, Roman, Dwilinski, Robert, Grzegory, Izabella, Bockowski, Michal, Sitar, Zlatko

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Influence of substrate planar defects on MOVPE GaN layer growth by Kamler, Grzegorz, Smalc-Koziorowska, Julita, Nowak, Grzegorz, Grzegory, Izabella, Klepka, Marcin T.

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Processing of Mechanically Polished Surfaces of Bulk GaN Substrates by Nowak, Grzegorz, Kamler, Grzegorz, Weyher, Janusz L, Grzegory, Izabella

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Nitride based laser diodes on substrates with patterned AlN mask by Sarzyński, Marcin, Kryśko, Marcin, Targowski, Grzegorz, Kamler, Grzegorz, Domagała, Jarosław, Czernecki, Robert, Libura, Adam, Perlin, Piotr, Leszczyński, Michał

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Bulk GaN single-crystals growth by Kamler, Grzegorz, Zachara, Janusz, Podsiadło, Sławomir, Adamowicz, Leszek, Gębicki, Wojciech

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Growth of bulk Ga1-xMnxN single crystals by SZYSZKO, Tomasz, KAMLER, Grzegorz, STROJEK, Beata, WEISBROD, Grzegorz, PODSIADŁO, Sławomir, ADAMOWICZ, Leszek, GEBICKI, Wojciech, SZCZYTKO, Jacek, TWARDOWSKI, Andrzej, SIKORSKI, Krzysztof

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Growth of bulk Ga 1− xMn xN single crystals by Szyszko, Tomasz, Kamler, Grzegorz, Strojek, Beata, Weisbrod, Grzegorz, Podsiadło, Sławomir, Adamowicz, Leszek, Gębicki, Wojciech, Szczytko, Jacek, Twardowski, Andrzej, Sikorski, Krzysztof

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