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    Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance

    Optimization of Impact Ionization in Metal–Oxide–Semiconductor Field-Effect Transistors for Improvement of Breakdown Voltage and Specific On-Resistance by Chen, Yanning, Song, Yixian, Wu, Bo, Liu, Fang, Deng, Yongfeng, Kang, Pingrui, Huang, Xiaoyun, Wu, Yongyu, Gao, Dawei, Xu, Kai

    Published in Electronics (Basel)
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