Search Results - Kang, Suk-June

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  1. 1
    Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device

    Study of Nickel Silicide Thermal Stability Using Silicon-on-Insulator Substrate for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transisor Device by Kim, Ji-Young, Kim, Cho-Rong, Lee, Jaeyeop, Park, Won-Wook, Leem, Jae-Young, Ryu, Hyukhyun, Lee, Won-Jae, Zhang, Ying-Ying, Jung, Soon-Yen, Lee, Hi-Deok, Kim, In-Kyum, Kang, Suk-June, Yuk, Hyung-Sang, Lee, Keunwoo, Jeon, Sunyeol, Jeon, Hyeongtag

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  2. 2
    Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device

    Effects of Strained Silicon Layer on Nickel (Germano)silicide for Nanoscale Complementary Metal Oxide Semiconductor Field-Effect Transistor Device by Kim, Ji-Young, Kim, Cho-Rong, Lee, Jaeyeop, Park, Won-Wook, Leem, Jae-Young, Ryu, Hyukhyun, Lee, Won-Jae, Zhang, Ying-Ying, Jung, Soon-Yen, Lee, Hi-Deok, Kim, In-Kyum, Kang, Suk-June, Yuk, Hyung-Sang, Lee, Keunwoo, Jeon, Sunyeol, Jeon, Hyeongtag

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    Formation of High Quality Strained-Si / Strained-SiGe Layers Grown on Relaxed SiGe Virtual Substrates for Advanced CMOS Application

    Formation of High Quality Strained-Si / Strained-SiGe Layers Grown on Relaxed SiGe Virtual Substrates for Advanced CMOS Application by In-kyum Kim, Suk-june Kang, Hyung-sang Yuk, Dong-kun Lee, Bo-young Lee

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  4. 4
    Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si 0.65 Ge 0.35 Layers

    Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si 0.65 Ge 0.35 Layers by Kang, Suk June, Yuk, Hyung-Sang, Kim, In-Kyum, Lee, Jea-Chun, Lee, Sang-Hyun, Shim, Jung-Jin, Lee, Bo-Young, Fiorenza, J. G., Curtin, M., Lochtefeld, Anthony

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