Search Results - Kangjung Kim

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  1. 1
    SRAM stability design comprehending 14nm FinFET reliability

    SRAM stability design comprehending 14nm FinFET reliability by Choelhwyi Bae, Sangwoo Pae, Cheong-sik Yu, Kangjung Kim, Yongshik Kim, Jongwoo Park

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  2. 2
    Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack

    Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack by Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo

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    Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack

    Investigation of BTI characteristics and its behavior on 10nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack by Jin, Minjung, Kim, Kangjung, Kim, Yoohwan, Shim, Hyewon, Kim, Jinju, Kim, Gunrae, Pae, Sangwoo

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  4. 4
    Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance

    Reliability characterization of 10nm FinFET technology with multi-VT gate stack for low power and high performance by Minjung Jin, Changze Liu, Jinju Kim, Jungin Kim, Hyewon Shim, Kangjung Kim, Gunrae Kim, Soonyoung Lee, Uemura, Taiki, Man Chang, Taehyun An, Junekyun Park, Sangwoo Pae

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  5. 5
    Experimental study on BTI variation impacts in SRAM based on high-k/metal gate FinFET: From transistor level Vth mismatch, cell level SNM to product level Vmin

    Experimental study on BTI variation impacts in SRAM based on high-k/metal gate FinFET: From transistor level Vth mismatch, cell level SNM to product level Vmin by Liu, Changze, Nam, Hyeonwoo, Kim, Kangjung, Choo, Seungjin, Kim, Hyejin, Kim, Hyunjin, Kim, Yoohwan, Lee, Soonyoung, Yoon, Sungyoung, Kim, Jungin, Kim, Jin Ju, Hwang, Lira, Ha, Sungmock, Jin, Min-Jung, Sagong, Hyun Chul, Park, June-Kyun, Pae, Sangwoo, Park, Jongwoo

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