Guiding effect of quantum wells in semiconductor lasers by Aleshkin, V.Ya, Dikareva, N.V., Dubinov, A.A., Zvonkov, B.N., Karzanova, M.V., Kudryavtsev, K.E., Nekorkin, S.M., Yablonskiy, A.N.

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Substrate-emitting semiconductor laser with a trapezoidal active region by Dikareva, N.V., Nekorkin, S.M., Karzanova, M.V., Zvonkov, B.N., Aleshkin, V.Ya, Dubinov, A.A., Afonenko, A.A.

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Effect of ion irradiation on the structure and luminescence characteristics of porous silicon impregnated with tungsten-telluride glass doped by Er and Yb impurities by Demidov, E. S., Karzanova, M. V., Mikhaylov, A. N., Tetelbaum, D. I., Belov, A. I., Korolev, D. S., Pavlov, D. A., Bobrov, A. I., Gorshkov, O. N., Demidova, N. E., Chigirinskii, Yu. I.

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Effect of preliminary oxidation annealing on properties of porous silicon impregnated with a tungsten-tellurite glass activated by Er and Yb by Demidov, E. S., Karzanova, M. V., Chigirinskii, Yu. I., Shushunov, A. N., Antonov, I. N., Sidorenko, K. V.

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Photoluminescence of porous silicon saturated with tungsten-tellurite glass with rare-earth metal impurities by Demidov, E. S., Mikhaylov, A. N., Belov, A. I., Karzanova, M. V., Demidova, N. E., Chigirinskii, Yu. I., Shushunov, A. N., Tetelbaum, D. I., Gorshkov, O. N., Evropeitsev, E. A.

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