Search Results - Katircioǧlu, Orhan

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  1. 1
    Importance of mastoid pneumatization on secretory otitis media

    Importance of mastoid pneumatization on secretory otitis media by Bayramoǧlu, Ismet, Ardiç, Fazil Necdet, Kara, Cüneyt Orhan, Özüer, Mehmet Ziya, Katircioǧlu, Orhan, Topuz, Bülent

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  2. 2
    Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements

    Annealing improvement on the localized states of plasma grown boron nitride film assessed through admittance measurements by Özdemir, Orhan, Anutgan, Mustafa, Aliyeva-Anutgan, Tamila, Atilgan, İsmail, Katircioğlu, Bayram

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  3. 3
    Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure

    Similar admittance behavior of amorphous silicon carbide and nitride dielectrics within the MIS structure by Özdemir, Orhan, Atılgan, İsmail, Katırcıogˇlu, Bayram

    Published in Vacuum
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  4. 4
    Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx:H/p-Si structure

    Abnormal frequency dispersion of the admittance associated with a chromium/plasma deposited a-SiNx:H/p-Si structure by OZDEMIR, Orhan, ATILGAN, Ismail, KATIRCIOGLU, Bayram

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  5. 5
    Electrical transport mechanism in boron nitride thin film

    Electrical transport mechanism in boron nitride thin film by Özdemir, Orhan, Anutgan, Mustafa, Aliyeva-Anutgan, Tamila, Atılgan, İsmail, Katırcıoğlu, Bayram

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  6. 6
    Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement

    Instability phenomenon originated from the disordered layer of the plasma-deposited BN film/c-Si interface assessed through the MIS structure by admittance measurement by Özdemir, Orhan, Anutgan, Mustafa, Aliyeva-Anutgan, Tamila, Atılgan, İsmail, Katırcıoğlu, Bayram

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  7. 7
    Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses

    Instability evolution within a-SiNx film assessed through MIS structure under bias and temperature stresses by ÖZDEMIR, Orhan, ATILGAN, Ismail, KATIRCIOGLU, Bayram

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  8. 8
    Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure

    Frequency dependence of conductivity in intrinsic amorphous silicon carbide film, assessed through admittance measurement of metal insulator semiconductor structure by Ozdemir, Orhan, Atilgan, Ismail, Akaoglu, Baris, Sel, Kivanc, Katircioglu, Bayram

    Published in Thin solid films
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  9. 9
    Correction of a mild breast contracture with a new technique: "V-Y-Z-PLASTY"

    Correction of a mild breast contracture with a new technique: "V-Y-Z-PLASTY" by G krem, Serdar, zdemir, Orhan M., Demirseren, M. Erol, Katircioglu, Arda, Can, Zeki, Sevin, Kutlu

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  10. 10
    Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films

    Admittance analysis of an MIS structure made with PECVD deposited a-SiNx:H thin films by ATILGAN, I, OZDER, S, OZDEMIR, O, KATIRCIOGLU, B

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  11. 11
    Admittance analysis of an MIS structure made with PECVD deposited a-SiN x:H thin films

    Admittance analysis of an MIS structure made with PECVD deposited a-SiN x:H thin films by Atilgan, İsmail, Özder, Serhat, Özdemir, Orhan, Katircioğlu, Bayram

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