Search Results - Katsavets, N.I.

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  1. 1
    InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3-5 m

    InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3-5 m by Dudin, A.L, Katsavets, N.I, Krasovitsky, D.M, Kokin, S.V, Chaly, V.P, Shukov, I.V

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  2. 2
    Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements

    Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 x 288 Elements by Boltar, K.O, Burlakov, I.D, Vlasov, P.V, Lopukhin, A.A, Chaliy, V.P, Katsavets, N.I

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  3. 3
    High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers

    High-power 0.8 mu m InGaAsP-GaAs SCH SQW lasers by Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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  4. 4
    Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates

    Hydride vapour phase epitaxy of GaN on molecular beam epitaxial GaN substrates by Bel'kov, V.V, Botnaryuk, V.M, Fedorov, L.M, Goncharuk, I.N, Novikov, S.V, Ulin, V.P, Zhilyaev, Yu.V, Cheng, T.S, Jeffs, N.J, Foxon, C.T, Katsavets, N.I, Harrison, I

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  5. 5
    High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers

    High-power 0. 8. mu. m InGaAsP-GaAs SCH SQW lasers by Garbuzov, D.Z., Antonishkis, N.Y., Bondarev, A.D., Gulakov, A.B., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Rafailov, E.V.

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  6. 6
    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes

    High-power Al-free buried InGaAsP/GaAs (/spl lambda/ = 0.8/spl mu/m) Laser Diodes by Garbuzov, D.Z., Antonishkis, N.Y., Il'inskaya, N.D., Zhigulin, S.N., Katsavets, N.I., Kochergin, A.V., Pyataev, V.Z., Fuksman, M.V.

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