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Search Results - Katsoev, L. V.
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Optimization of the structure of gallium-arsenide-based detectors with taking into account recombination losses
by
Katsoev, L. V.
,
Katsoev, V. V.
,
Il’ichev, É. A.
Published in
Semiconductors (Woodbury, N.Y.)
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Role of deep-level centers in compensated semi-insulating GaAs
by
Katsoev, V. V.
,
Katsoev, L. V.
,
Il’ichev, E. A.
Published in
Russian microelectronics
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P-i-n structures based on high-ohmic gettered gallium arsenide for α particle detectors
by
Gorelenok, A. T.
,
Tomasov, A. A.
,
Shmidt, N. M.
,
Il’ichev, É. A.
,
Lantratov, V. M.
,
Zadiranov, Yu. M.
,
Brunkov, P. N.
,
Titkova, O. V.
,
Kalyuzhnyĭ, N. A.
,
Mintarov, S. A.
,
Mdivani, V. N.
,
Katsoev, V. V.
,
Katsoev, L. V.
,
Shmelev, S. S.
Published in
Technical physics letters
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Russian Microelectronics
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Semiconductors
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