Search Results - Kawara, Katsuaki

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  1. 1
    In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

    In-plane orientation control of (001) κ-Ga2O3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Shinohe, Takashi

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  2. 2
    Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy

    Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy by Murakami, Hisashi, Nomura, Kazushiro, Goto, Ken, Sasaki, Kohei, Kawara, Katsuaki, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori

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  3. 3
    Rapid growth of α -Ga 2 O 3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

    Rapid growth of α -Ga 2 O 3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  4. 4
    Rapid growth of -Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties

    Rapid growth of -Ga2O3 by HCl-boosted halide vapor phase epitaxy and effect of precursor supply conditions on crystal properties by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  5. 5
    In-plane anisotropy in the direction of the dislocation bending in α -Ga 2 O 3 grown by epitaxial lateral overgrowth

    In-plane anisotropy in the direction of the dislocation bending in α -Ga 2 O 3 grown by epitaxial lateral overgrowth by Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  6. 6
    In-plane anisotropy in the direction of the dislocation bending in -Ga2O3 grown by epitaxial lateral overgrowth

    In-plane anisotropy in the direction of the dislocation bending in -Ga2O3 grown by epitaxial lateral overgrowth by Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  7. 7
    Elimination of threading dislocations in -Ga2O3 by double-layered epitaxial lateral overgrowth

    Elimination of threading dislocations in -Ga2O3 by double-layered epitaxial lateral overgrowth by Kawara, Katsuaki, Oshima, Yuichi, Okigawa, Mitsuru, Shinohe, Takashi

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  8. 8
    Elimination of threading dislocations in α -Ga 2 O 3 by double-layered epitaxial lateral overgrowth

    Elimination of threading dislocations in α -Ga 2 O 3 by double-layered epitaxial lateral overgrowth by Kawara, Katsuaki, Oshima, Yuichi, Okigawa, Mitsuru, Shinohe, Takashi

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  9. 9
    In-plane orientation control of (001) κ -Ga 2 O 3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism

    In-plane orientation control of (001) κ -Ga 2 O 3 by epitaxial lateral overgrowth through a geometrical natural selection mechanism by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Shinohe, Takashi

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  10. 10
    Phase-controlled epitaxial lateral overgrowth of -Ga2O3 by halide vapor phase epitaxy

    Phase-controlled epitaxial lateral overgrowth of -Ga2O3 by halide vapor phase epitaxy by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  11. 11
    Phase-controlled epitaxial lateral overgrowth of α -Ga 2 O 3 by halide vapor phase epitaxy

    Phase-controlled epitaxial lateral overgrowth of α -Ga 2 O 3 by halide vapor phase epitaxy by Oshima, Yuichi, Kawara, Katsuaki, Oshima, Takayoshi, Okigawa, Mitsuru, Shinohe, Takashi

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  12. 12
    Homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy

    Homoepitaxial growth of β-Ga 2 O 3 layers by halide vapor phase epitaxy by Murakami, Hisashi, Nomura, Kazushiro, Goto, Ken, Sasaki, Kohei, Kawara, Katsuaki, Thieu, Quang Tu, Togashi, Rie, Kumagai, Yoshinao, Higashiwaki, Masataka, Kuramata, Akito, Yamakoshi, Shigenobu, Monemar, Bo, Koukitu, Akinori

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