Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers by Marinov, Daniil, de Marneffe, Jean-François, Smets, Quentin, Arutchelvan, Goutham, Bal, Kristof M., Voronina, Ekaterina, Rakhimova, Tatyana, Mankelevich, Yuri, El Kazzi, Salim, Nalin Mehta, Ankit, Wyndaele, Pieter-Jan, Heyne, Markus Hartmut, Zhang, Jianran, With, Patrick C., Banerjee, Sreetama, Neyts, Erik C., Asselberghs, Inge, Lin, Dennis, De Gendt, Stefan

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Diffraction studies for stoichiometry effects in BaTiO3 grown by molecular beam epitaxy on Ge(001) by Hsu, Min-Hsiang Mark, Merckling, Clement, El Kazzi, Salim, Pantouvaki, Marianna, Richard, Oliver, Bender, Hugo, Meersschaut, Johan, Van Campenhout, Joris, Absil, Philippe, Van Thourhout, Dries

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Covalent functionalization of molybdenum disulfide by chemically activated diazonium salts by Daukiya, Lakshya, Teyssandier, Joan, Eyley, Samuel, El Kazzi, Salim, Rodríguez González, Miriam Candelaria, Pradhan, Bapi, Thielemans, Wim, Hofkens, Johan, De Feyter, Steven

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Assessment of wafer scale MoS2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H2S precursors by Curtis, Michael, Maryon, Olivia, McKibben, Nicholas, Eixenberger, Josh, Chen, Chen, Chinnathambi, Karthik, Pasko, Sergej, Salim El Kazzi, Redwing, Joan M, Estrada, David

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Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy by Mortelmans, Wouter, El Kazzi, Salim, Groven, Benjamin, Nalin Mehta, Ankit, Balaji, Yashwanth, De Gendt, Stefan, Heyns, Marc, Merckling, Clement

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Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction by Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Gundlach, David, Richter, Curt A., Mocuta, Anda, Collaert, Nadine, Thean, Aaron Voon-Yew, Heyns, Marc M.

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Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs by Alian, Alireza, Kazzi, Salim El, Verhulst, Anne, Milenin, Alexey, Pinna, Nicolo, Ivanov, Tsvetan, Lin, Dennis, Mocuta, Dan, Collaert, Nadine

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Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements by Smets, Quentin, Verhulst, Anne S., El Kazzi, Salim, Verreck, Devin, Richard, Olivier, Bender, Hugo, Collaert, Nadine, Mocuta, Anda, Thean, Aaron, Heyns, Marc M.

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Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification by Smets, Quentin, Verhulst, Anne S., Martens, Koen, Lin, Han Chung, Kazzi, Salim El, Verreck, Devin, Simoen, Eddy, Collaert, Nadine, Thean, Aaron, Raskin, Jean-Pierre, Heyns, Marc M.

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Demonstration of Direction Dependent Conduction through MoS2 Films Prepared by Tunable Mass Transport Fabrication by Chiappe, Daniele, Mongillo, Massimo, Asselberghs, Inge, Kazzi, Salim El, Caymax, Matty, Barla, Kathy, De Gendt, Stefan, Radu, Iuliana, Huyghebaert, Cedric

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Built-In Sheet Charge As an Alternative to Dopant Pockets in Tunnel Field-Effect Transistors by Verreck, Devin, Verhulst, Anne S., Xiang, Yang, Yakimets, Dmitry, El Kazzi, Salim, Parvais, Bertrand, Groeseneken, Guido, Collaert, Nadine, Mocuta, Anda

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Material-Selective Doping of 2D TMDC through AlxOy Encapsulation by Leonhardt, Alessandra, Chiappe, Daniele, Afanas'ev, Valeri V, El Kazzi, Salim, Shlyakhov, Ilya, Conard, Thierry, Franquet, Alexis, Huyghebaert, Cedric, de Gendt, Stefan

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Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides by Mo, Jiongjiong, El Kazzi, Salim, Mortelmans, Wouter, Mehta, Ankit Nalin, Sergeant, Stefanie, Smets, Quentin, Asselberghs, Inge, Huyghebaert, Cedric

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Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces by Mortelmans, Wouter, El Kazzi, Salim, Nalin Mehta, Ankit, Vanhaeren, Danielle, Conard, Thierry, Meersschaut, Johan, Nuytten, Thomas, De Gendt, Stefan, Heyns, Marc, Merckling, Clement

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Assessment of wafer scale MoS 2 atomic layers grown by metal-organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors by Curtis, Michael, Maryon, Olivia, McKibben, Nicholas, Eixenberger, Josh, Chen, Chen, Chinnathambi, Karthik, Pasko, Sergej, El Kazzi, Salim, Redwing, Joan M, Estrada, David

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Alcohol-Based Digital Etch for III-V Vertical Nanowires With Sub-10 nm Diameter by Wenjie Lu, Xin Zhao, Dongsung Choi, El Kazzi, Salim, del Alamo, Jesus A.

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Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity by Chiappe, Daniele, Ludwig, Jonathan, Leonhardt, Alessandra, El Kazzi, Salim, Nalin Mehta, Ankit, Nuytten, Thomas, Celano, Umberto, Sutar, Surajit, Pourtois, Geoffrey, Caymax, Matty, Paredis, Kristof, Vandervorst, Wilfried, Lin, Dennis, De Gendt, Stefan, Barla, Kathy, Huyghebaert, Cedric, Asselberghs, Inge, Radu, Iuliana

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Nucleation and coalescence of tungsten disulfide layers grown by metalorganic chemical vapor deposition by Tang, Haonan, Pasko, Sergej, Krotkus, Simonas, Anders, Thorsten, Wockel, Cornelia, Mischke, Jan, Wang, Xiaochen, Conran, Ben, McAleese, Clifford, Teo, Ken, Banerjee, Sreetama, Silva, Henry Medina, Morin, Pierre, Asselberghs, Inge, Ghiami, Amir, Grundmann, Annika, Tang, Songyao, Fiadziushkin, Hleb, Kalisch, Holger, Vescan, Andrei, El Kazzi, Salim, Marty, Alain, Dosenovic, Djordje, Okuno, Hanako, Le Van-Jodin, Lucie, Heuken, Michael

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Future materials for beyond Si integrated circuits: a Perspective by Colombo, Luigi, Kazzi, Salim El, Popovici, Mihaela, Delie, Gilles, Kwon, Dae Seon, McMitchell, Sean RC, Adelmann, Christoph

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Peculiar alignment and strain of 2D WSe 2 grown by van der Waals epitaxy on reconstructed sapphire surfaces by Mortelmans, Wouter, El Kazzi, Salim, Nalin Mehta, Ankit, Vanhaeren, Danielle, Conard, Thierry, Meersschaut, Johan, Nuytten, Thomas, De Gendt, Stefan, Heyns, Marc, Merckling, Clement

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