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Low Power and Improved Switching Properties of Selector-Less Ta2O5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
by
Kim, Beomyong
,
Kim, Wangee
,
Kim, Hyojune
,
Jung, Kyooho
,
Park, Wooyoung
,
Seo, Bomin
,
Joo, Moonsig
,
Lee, Keejeung
,
Hong, Kwon
,
Park, Sungki
Published in
Jpn J Appl Phys
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Low Power and Improved Switching Properties of Selector-Less Ta sub(2)O sub(5) Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
by
Kim, Beomyong
,
Kim, Wangee
,
Kim, Hyojune
,
Jung, Kyooho
,
Park, Wooyoung
,
Seo, Bomin
,
Joo, Moonsig
,
Lee, Keejeung
,
Hong, Kwon
,
Park, Sungki
Published in
Japanese Journal of Applied Physics
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Low Power and Improved Switching Properties of Selector-Less Ta 2 O 5 Based Resistive Random Access Memory Using Ti-Rich TiN Electrode
by
Kim, Beomyong
,
Kim, Wangee
,
Kim, Hyojune
,
Jung, Kyooho
,
Park, Wooyoung
,
Seo, Bomin
,
Joo, Moonsig
,
Lee, Keejeung
,
Hong, Kwon
,
Park, Sungki
Published in
Japanese Journal of Applied Physics
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The study of flat-band voltage shift using arsenic ion-implantation with High-k/Metal Inserted Poly Si gate stacks
by
BeomYong Kim
,
YunHyuck Ji
,
SeungMi Lee
,
BongSeok Jeon
,
KeeJeung Lee
,
Kwon Hong
,
SungKi Park
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Japanese Journal Of Applied Physics
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Jpn J Appl Phys
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Tin
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Capacitance-Voltage Characteristics
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General Engineering
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Logic Gates
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Mos Capacitors
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Nitrogen
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Random Access Memory
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Tantalum Oxides
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Institute Of Physics
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Ieee Electronic Library (Iel) Conference Proceedings
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Ieee Xplore All Conference Series
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Science Citation Index Expanded (Web Of Science)
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