Stacked Ge-Nanosheet GAAFETs Fabricated by Ge/Si Multilayer Epitaxy by Chu, Chun-Lin, Wu, Kehuey, Luo, Guang-Li, Chen, Bo-Yuan, Chen, Shih-Hong, Wu, Wen-Fa, Yeh, Wen-Kuan

Get full text

The Impact of Junction Doping Distribution on Device Performance Variability and Reliability for Fully Depleted Silicon on Insulator With Thin Box Layer MOSFETs by Yeh, Wen-Kuan, Lin, Cheng-Li, Chou, Tung-Huan, Wu, Kehuey, Yuan, Jiann-Shiun

Get full text

Performance advantage and energy saving of triangular-shaped FinFETs by Kehuey Wu, Wei-Wen Ding, Meng-Hsueh Chiang

Request full text

A novel bottom-up Ag contact (30nm diameter and 6.5 aspect ratio) technology by electroplating for 1Xnm and beyond technology by Chao-An Jong, Po-Jung Sung, Mei-Yi Lee, Fu-Ju Hou, Kehuey Wu, Ying-Hao Su, Bing-Mau Chen, Chia-Wei Ho, Ren-Jei Chung, Yao-Jen Lee, Wen-Fa Wu, Chenming Hu, Fu-Liang Yang

Request full text

Evaluation of S/D Resistance (RSD) and Strain Scalability by Mechanical-bending Approach by Kehuey Wu, Chih-Sheng Chang, Hong-Nien Lin, Wen-Chin Lee

Request full text

Enhanced Performance of Strained CMOSFETs Using Metallized Source/Drain Extension (M-SDE) by Chen, Hung-Wei, Ko, Chih-Hsin, Wang, Tzu-Juei, Ge, Chung-Hu, Wu, Kehuey, Lee, Wen-Chin

Request full text

The GAAFETs with Five Stacked Ge Nano-sheets Made by 2D Ge/Si Multilayer Epitaxy, Excellent Selective Etching, and Conformal Monolayer Doping by Chu, Chun-Lin, Luo, Guang-Li, Wu, Kehuey, Chen, Shih-Hong, Hsu, Chien-Chung, Chen, Bo-Yuan, Lin, Kun-Lin, Wu, Wen-Fa, Yeh, Wen-Kuan

Request full text

The Observation of Width Quantization Impact on Device Performance and Reliability for High-k/Metal Tri-Gate FinFET by Yeh, Wen-Kuan, Zhang, Wenqi, Yang, Yi-Lin, Dai, An-Ni, Wu, Kehuey, Chou, Tung-Huan, Lin, Cheng-Li, Gan, Kwang-Jow, Shih, Chia-Hung, Chen, Po-Ying

Get full text