Improved performance of SiGe nanocrystal memory with VARIOT tunnel barrier by Yueran Liu, Dey, S., Shan Tang, Kelly, D.Q., Sarkar, J., Banerjee, S.K.

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Improved hot-electron reliability in strained-Si nMOS by Onsongo, D., Kelly, D.Q., Dey, S., Wise, R.L., Cleavelin, C.R., Banerjee, S.K.

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Negative Differential Resistance in Buried-Channel \hbox \hbox pMOSFETs by En-Shao Liu, Kelly, D.Q., Donnelly, J.P., Tutuc, E., Banerjee, S.K.

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Negative Differential Resistance in Buried-Channel [Formula Omitted] pMOSFETs by Liu, En-Shao, Kelly, D.Q, Donnelly, J.P, Tutuc, E, Banerjee, S.K

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BC high-[kappa]/metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates by Kelly, D.Q, Donnelly, J.P, Dey, S, Joshi, S.V, Gutierrez, D.I.G, Yacaman, M.J, Banerjee, S.K

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Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs by Kelly, D.Q., Lee, S., Kalra, P., Harris, R., Oh, J., Kirsch, P., Banerjee, S.K., Majhi, P., Tseng, H., Jammy, R.

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BC high-/spl kappa//metal gate Ge/C alloy pMOSFETs fabricated directly on Si (100) substrates by Kelly, D.Q., Donnelly, J.P., Dey, S., Joshi, S.V., Gutierrez, D.I.G., Yacaman, M.J., Banerjee, S.K.

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Considerations for evaluating hot-electron reliability of strained Si n-channel MOSFETs by Kelly, D.Q., Dey, S., Onsongo, D., Banerjee, S.K.

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Mechanisms limiting EOT scaling and gate leakage currents of high-k/metal gate stacks directly on SiGe and a method to enable sub-1nm EOT by Huang, J., Kirsch, P.D., Oh, J., Lee, S.H., Price, J., Majhi, P., Harris, H.R., Gilmer, D.C., Kelly, D.Q., Sivasubramani, P., Bersuker, G., Heh, D., Young, C., Park, C.S., Tan, Y.N., Goel, N., Park, C., Hung, P.Y., Lysaght, P., Choi, K.J., Cho, B.J., Tseng, H-H., Lee, B.H., Jammy, R.

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Drive current enhancement in high-K/metal gate germanium-carbide pMOSFETs fabricated directly on Si substrates by Kelly, D.Q., Donnelly, J.P., Joshi, S.V., Dey, S., Garcia Gutierrez, D.I., Yacaman, M.J., Banerjee, S.K.

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High Mobility Strained Ge MOSFETs with high-k gate dielectric on Si by Donnelly, J.P., Kelly, D.Q., Joshi, S., Dey, S., Shahrjerdi, D., Wiedeman, I., Ahmad, D., Banerjee, S.K.

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Nanocrystal flash memory fabricated with protein-mediated assembly by Shan Tang, Chuanbin Mao, Yueran Liu, Kelly, D.Q., Banerjee, S.K.

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Thin Germanium-Carbon Layers on Silicon for Metal-Oxide-Semiconductor Devices by Kelly, D.Q., Wiedmann, I., Garcia Gutierrez, D.I., Yacaman, M.J., Banerjee, S.K.

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A geospatial approach for assessing denitrification sinks within lower-order catchments by Kellogg, D.Q., Gold, Arthur J., Cox, Suzanne, Addy, Kelly, August, Peter V.

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Automated classification of right and posterior myocardial infarcts improves with increasing numbers of right-sided and posterior leads by Kelly, D.J, Lindauer, J.M, Gregg, R.E, Feild, D.Q, Helfenbein, E.D, Horacek, B.M, Zhou, S.H

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