Establishing Best-Practice Modeling Approaches for Understanding Single-Event Transients in Gb/s SiGe Digital Logic by Moen, Kurt A., Phillips, Stanley D., Kenyon, Eleazar W., Cressler, John D.

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An Investigation of Total Ionizing Dose Damage on a Pulse Generator Intended for Space-Based Impulse Radio UWB Transceivers by Inanlou, Farzad, Kenyon, Eleazar, Cressler, John

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An 8-16 GHz SiGe Low Noise Amplifier With Performance Tuning Capability for Mitigation of Radiation-Induced Performance Loss by Howard, D. C., Saha, P. K., Shankar, S., Diestelhorst, R. M., England, T. D., Lourenco, N. E., Kenyon, E., Cressler, J. D.

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Total Ionizing Dose Response of Triple-Well FET-Based Wideband, High-Isolation RF Switches in a 130 nm SiGe BiCMOS Technology by Cardoso, Adilson S., Chakraborty, Partha S., Lourenco, Nelson E., Song, Peter, England, Troy D., Kenyon, Eleazar W., Karaulac, Nedeljko, Cressler, John D.

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X-ray radiation effects in multilayer epitaxial graphene by Hicks, Jeremy, Arora, Rajan, Kenyon, Eleazar, Chakraborty, Partha S., Tinkey, Holly, Hankinson, John, Berger, Claire, de Heer, Walt A., Conrad, Edward H., Cressler, John D.

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Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems by Fleetwood, Zachary E., Kenyon, Eleazar W., Lourenco, Nelson E., Jain, Shaleen, En Xia Zhang, England, Troy D., Cressler, John D., Schrimpf, Ronald D., Fleetwood, Daniel M.

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Cold-capable, radiation-hardened SiGe BiCMOS wireline transceivers by England, Troy, Chatterjee, Chandim, Lourenco, Nelson, Finn, Steven, Najafizadeh, Laleh, Phillips, Stanley, Kenyon, Eleazar, Diestelhorst, Ryan, Cressler, John

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