Search Results - Kessels, F.J.H

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  1. 1
    Cracking Behaviour during Au-Au TAB Inner Lead Bonding

    Cracking Behaviour during Au-Au TAB Inner Lead Bonding by Baggerman, A.F.J, Kessels, F.J.H

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  2. 2
    Cracking Behaviour during AuAu TAB Inner Lead Bonding

    Cracking Behaviour during AuAu TAB Inner Lead Bonding by Baggerman, A.F.J., Kessels, F.J.H.

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  3. 3
    Correlating drop impact simulations with drop impact testing using high-speed camera measurements

    Correlating drop impact simulations with drop impact testing using high-speed camera measurements by Zaal, J.J.M., van Driel, W.D., Kessels, F.J.H., Zhang, G.Q.

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  4. 4
    Aging kinetics for temperature loads of z-conductive adhesives in-situ monitoring of the contact resistance of heat seal connectors

    Aging kinetics for temperature loads of z-conductive adhesives in-situ monitoring of the contact resistance of heat seal connectors by Caers, J.F.J.M., Kessels, F.J.H.

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  5. 5
    Hardness reduction of Au bumps for tab interconnections

    Hardness reduction of Au bumps for tab interconnections by Baggerman, A.F.J., Kessels, F.J.H.

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  6. 6
    High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing

    High rate (∼3 nm/s) deposition of dense silicon nitride films at low substrate temperatures (<150 °C) using the expanding thermal plasma and substrate biasing by van Assche, F.J.H., Kessels, W.M.M., Vangheluwe, R., Mischke, W.S., Evers, M., van de Sanden, M.C.M.

    Published in Thin solid films
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  7. 7
    High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma

    High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma by Kessels, W. M. M., Hong, J., van Assche, F. J. H., Moschner, J. D., Lauinger, T., Soppe, W. J., Weeber, A. W., Schram, D. C., van de Sanden, M. C. M.

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  8. 8
    Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films

    Bulk passivation of multicrystalline silicon solar cells induced by high-rate-deposited (> 1 nm/s) silicon nitride films by Hong, J., Kessels, W. M. M., van Assche, F. J. H., Rieffe, H. C., Soppe, W. J., Weeber, A. W., van de Sanden, M. C. M.

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  9. 9
    The growth kinetics of silicon nitride deposited from the SiH 4–N 2 reactant mixture in a remote plasma

    The growth kinetics of silicon nitride deposited from the SiH 4–N 2 reactant mixture in a remote plasma by Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M.

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  10. 10
    The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

    The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma by Kessels, W.M.M., van Assche, F.J.H., van den Oever, P.J., van de Sanden, M.C.M.

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  11. 11
    High-rate (> 1 nm/s) plasma deposited a-SiN/sub x/:H films for mc-Si solar cell application

    High-rate (> 1 nm/s) plasma deposited a-SiN/sub x/:H films for mc-Si solar cell application by Hong, J., Kessels, W.M.M., van Assche, F.J.H., Arnold Bik, W.M., Rieffe, H.C., Soppe, W.J., Weeber, A., van de Sanden, M.C.M.

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