Mitigating wakeup effect and improving endurance of ferroelectric HfO2-ZrO2 thin films by careful La-doping by Kozodaev, Maxim G., Chernikova, Anna G., Korostylev, Evgeny V., Park, Min Hyuk, Khakimov, Roman R., Hwang, Cheol S., Markeev, Andrey M.

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La-doped Hf0.5Zr0.5O2 thin films for high-efficiency electrostatic supercapacitors by Kozodaev, Maxim G., Chernikova, Anna G., Khakimov, Roman R., Park, Min Hyuk, Markeev, Andrey M., Hwang, Cheol Seong

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On the Reliability of HZO-Based Ferroelectric Capacitors: The Cases of Ru and TiN Electrodes by Khakimov, Roman R., Chernikova, Anna G., Koroleva, Aleksandra A., Markeev, Andrey M.

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Chemical and electronic properties of interfaces between RuO2 and Hf0.5Zr0.5O2 studied by x-ray photoelectron spectroscopy by Chernikova, Anna G., Lebedinskii, Yury Yu, Khakimov, Roman R., Markeev, A. M.

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Influence of ALD Ru bottom electrode on ferroelectric properties of Hf0.5Zr0.5O2-based capacitors by Chernikova, Anna G., Kozodaev, Maxim G., Khakimov, Roman R., Polyakov, Sergey N., Markeev, A. M.

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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures by Koroleva, Aleksandra A, Chernikova, Anna G, Chouprik, Anastasia A, Gornev, Evgeny S, Slavich, Aleksandr S, Khakimov, Roman R, Korostylev, Evgeny V, Hwang, Cheol Seong, Markeev, Andrey M

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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO2 Insets by Koroleva, Aleksandra A., Chernikova, Anna G., Zarubin, Sergei S., Korostylev, Evgeny, Khakimov, Roman R., Zhuk, Maksim Yu, Markeev, Andrey M.

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Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors by Khakimov, Roman R, Chernikova, Anna G, Lebedinskii, Yury, Koroleva, Aleksandra A, Markeev, Andrey M

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Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaO x ‑Based Memory Structures by Koroleva, Aleksandra A, Chernikova, Anna G, Chouprik, Anastasia A, Gornev, Evgeny S, Slavich, Aleksandr S, Khakimov, Roman R, Korostylev, Evgeny V, Hwang, Cheol Seong, Markeev, Andrey M

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Retention Improvement of HZO-Based Ferroelectric Capacitors with TiO 2 Insets by Koroleva, Aleksandra A, Chernikova, Anna G, Zarubin, Sergei S, Korostylev, Evgeny, Khakimov, Roman R, Zhuk, Maksim Yu, Markeev, Andrey M

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Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf 0.5 Zr 0.5 O 2 /TiN Capacitors by Khakimov, Roman R., Chernikova, Anna G., Lebedinskii, Yury, Koroleva, Aleksandra A., Markeev, Andrey M.

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Design and fabrication of plasmonic nanostructures for spectroscopic applications by Kravchenko, A, Khakimov, R, Shevchenko, A, Priimagi, A, Kaivola, M, Ovchinnikov, V

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