Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells by Yeh, J.-Y., Mawst, L.J., Khandekar, A.A., Kuech, T.F., Vurgaftman, I., Meyer, J.R., Tansu, N.

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Discrete sliding mode control for robust tracking of higher order delay time systems with experimental application by Khandekar, A.A., Malwatkar, G.M., Patre, B.M.

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Discrete sliding mode controller with reaching phase elimination for TITO systems by Hajare, V.D., Khandekar, A.A., Patre, B.M.

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Discrete sliding mode control for robust tracking of time-delay systems by Khandekar, A.A., Patre, B.M.

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Selective MOCVD growth of single-crystal dense GaAs quantum dot array using cylinder-forming diblock copolymers by Park, J.H., Khandekar, A.A., Park, S.M., Mawst, L.J., Kuech, T.F., Nealey, P.F.

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The evolution of the microstructure and morphology of metal-organic vapor-phase epitaxy-grown InAs films on (1 0 0) GaAs by Khandekar, A.A., Suryanarayanan, G., Babcock, S.E., Kuech, T.F.

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Effects of Ga-and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1-ySby films grown via metalorganic vapor phase epitaxy by KHANDEKAR, A. A, YEH, J. Y, MAWST, L. J, XUEYAN SONG, BABCOCK, S. E, KUECH, T. F

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MOVPE growth of antimonide-containing alloy materials for long wavelength applications by Kuech, T.F., Khandekar, A.A., Rathi, M., Mawst, L.J., Huang, J.Y.T., Song, Xueyan, Babcock, S.E., Meyer, J.R., Vurgaftman, I.

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Growth of strained GaAs1-ySby layers using metalorganic vapor phase epitaxy by KHANDEKAR, A. A, YEH, J. Y, MAWST, L. J, XUEYAN SONG, BABCOCK, S. E, KUECH, T. F

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Growth of AlN by vectored flow epitaxy by Clayton, A.J., Khandekar, A.A., Kuech, T.F., Mason, N.J., Robinson, M.F., Watkins, S., Guo, Y.

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Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs 1− y Sb y films grown via metalorganic vapor phase epitaxy by Khandekar, A.A., Yeh, J.Y., Mawst, L.J., Song, Xueyan, Babcock, S.E., Kuech, T.F.

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Growth of strained GaAs 1− y Sb y layers using metalorganic vapor phase epitaxy by Khandekar, A.A., Yeh, J.Y., Mawst, L.J., Song, Xueyan, Babcock, S.E., Kuech, T.F.

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Microcontact printing of indium metal using salt solution “ink” by Allen, C.G., Dorr, J.C., Khandekar, A.A., Beach, J.D., Schick, I.C., Schick, E.J., Collins, R.T., Kuech, T.F.

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InAs growth and development of defect microstructure on GaAs by Khandekar, A.A., Suryanarayanan, G., Babcock, S.E., Kuech, T.F.

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Effects of Gas switching sequences on GaAs/GaAs 1− y Sb y superlattices by Hawkins, B.E., Khandekar, A.A., Yeh, J.Y., Mawst, L.J., Kuech, T.F.

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Characteristics of GaAsN∕GaAsSb type-II quantum wells grown by metalorganic vapor phase epitaxy on GaAs substrates by Khandekar, A. A., Hawkins, B. E., Kuech, T. F., Yeh, J. Y., Mawst, L. J., Meyer, J. R., Vurgaftman, I., Tansu, N.

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Effects of Gas switching sequences on GaAs/GaAs1−ySby superlattices by Hawkins, B.E., Khandekar, A.A., Yeh, J.Y., Mawst, L.J., Kuech, T.F.

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Surface states passivation for and regrowth around nanoposts formed for the fabrication of InP-based intersubband quantum box lasers by Rathi, M.K., Tsvid, G., Shin, J.C., Khandekar, A.A., Botez, D., Kuech, T.F.

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GaAsSb-GaAsN -based type-II 'W' structures for mid-IR emission by Rathi, M.K., Khandekar, A.A., Xueyan Song, Babcock, S.E., Mawst, L.J., Kuech, T.F.

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Design of Centralized PI/PID Controller: Interaction Measure Approach by Malwatkar, G.M., Khandekar, A.A., Asutkar, V.G., Waghmare, L.M.

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