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Homoepitaxial growth of HVPE-GaN doped with Si
by
Iwinska, M.
,
Sochacki, T.
,
Amilusik, M.
,
Kempisty, P.
,
Lucznik, B.
,
Fijalkowski, M.
,
Litwin-Staszewska, E.
,
Smalc-Koziorowska, J.
,
Khapuridze, A.
,
Staszczak, G.
,
Grzegory, I.
,
Bockowski, M.
Published in
Journal of crystal growth
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Journal Of Crystal Growth
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Subjects
A1. Characterization
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A3. Hydride Vapor Phase Epitaxy
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B1. Gan
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B1. Nitrides
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B2. Semiconducting Iii-V Materials
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B2. Semiconducting Iii–V Materials
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Crystallization
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Crystallography
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Gallium Nitrides
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Materials Science
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Materials Science, Multidisciplinary
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Optical Properties
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Seeds
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Silicon
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Single Crystals
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Elsevier Sciencedirect Journals
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Sciencedirect Freedom Collection
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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