Search Results - Khazhiev, M. U.

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  1. 1
    The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures

    The study of factors that influence on the effectiveness of the photoconversion of n-CdS/p-CdTe heterostructures by Kabulov, R. R., Makhmudov, M. A., Ataboev, O. K., Khazhiev, M. U.

    Published in Applied solar energy
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  2. 2
    Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion

    Activation Energy of the Conductance of p–n-4H-SiC 〈Al〉 Structures Doped with Aluminum by the Method of Low-Temperature Diffusion by Zhuraev, Kh. N., Yusupov, A., Gulyamov, A. G., Khazhiev, M. U., Saidov, D. Sh, Adilov, N. B.

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  3. 3
    Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods

    Study of n-SnO2/p-Si Heterostructures Fabricated by Chemical Vapor Deposition Methods by Khazhiev, M. U., Kabulov, R. R., Gulyamov, A. G., Juraev, Kh. N., Saidov, D. S.

    Published in Applied solar energy
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  4. 4
    Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD

    Correlation between the structure, specific resistance, and optical properties of ITO films grown by CVD by Atabaev, I. G., Khazhiev, M. U., Zakirova, S. B., Shermatov, Z.

    Published in Applied solar energy
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  5. 5
    Electrical properties of p-Si1-xGexAu-Based p-i-n structures and Schottky barriers

    Electrical properties of p-Si1-xGexAu-Based p-i-n structures and Schottky barriers by Atabaev, I G, Matchanov, N A, Bakhranov, E N, Khazhiev, M U

    Published in Inorganic materials
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  6. 6
    Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers

    Electrical properties of p-Si1 − x Ge x Au-Based p-i-n structures and Schottky barriers by Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

    Published in Inorganic materials
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  7. 7
    Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals

    Homogeneity of high-resistivity p-Si1 − x Ge x 〈Au〉 crystals by Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

    Published in Inorganic materials
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  8. 8
    On the Possibility of Determining the Diffusion Length of Excitons in Semiconductors from Photomagnetic Measurement Data

    On the Possibility of Determining the Diffusion Length of Excitons in Semiconductors from Photomagnetic Measurement Data by Atabaev, I. G.

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  9. 9
    Growth and properties of single crystals of Si1 − xGex (0 < x < 0.35) solid solutions

    Growth and properties of single crystals of Si1 − xGex (0 < x < 0.35) solid solutions by Atabaev, I. G., Matchanov, N. A., Khazhiev, M. U., Yusupova, Sh. A.

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  10. 10
    Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

    Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions by Atabaev, I. G., Matchanov, N. A., Khazhiev, M. U., Yusupova, Sh. A.

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  11. 11
    Homogeneity of high-resistivity p -Si1 - x Ge x crystals

    Homogeneity of high-resistivity p -Si1 - x Ge x crystals by Atabaev, I G, Matchanov, N A, Bakhranov, E N, Khazhiev, M U

    Published in Inorganic materials
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  12. 12
    Homogeneity of high-resistivity p-Si1 − xGex〈Au〉 crystals

    Homogeneity of high-resistivity p-Si1 − xGex〈Au〉 crystals by Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

    Published in Inorganic materials
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  13. 13
    Electrical properties of p-Si1 − x GexAu-Based p-i-n structures and Schottky barriers

    Electrical properties of p-Si1 − x GexAu-Based p-i-n structures and Schottky barriers by Atabaev, I. G., Matchanov, N. A., Bakhranov, E. N., Khazhiev, M. U.

    Published in Inorganic materials
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