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Rapid relaxation of crystallographic anisotropy in SiO2-removed lateral epitaxial overgrown GaN layers
by
MIN HONG KIM
,
YOONHO CHOI
,
JAE HYUNG YI
,
MIN YANG
,
JINA JEON
,
SEONGWON KHYM
,
LEEM, Shi-Jong
Published in
Journal of crystal growth
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Rapid relaxation of crystallographic anisotropy in SiO 2-removed lateral epitaxial overgrown GaN layers
by
Kim, Min Hong
,
Choi, Yoonho
,
Yi, Jae Hyung
,
Yang, Min
,
Jeon, Jina
,
Khym, Seongwon
,
Leem, Shi-Jong
Published in
Journal of crystal growth
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Journal Title
Journal Of Crystal Growth
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Subjects
A1. Stresses
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A3. Lateral Overgrowth
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A3. Metalorganic Chemical Vapor Deposition
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B1. Gallium Compounds
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Applied Sciences
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Chemical Vapor Deposition
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Cross-Disciplinary Physics: Materials Science; Rheology
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Crystallography
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Deposition Technology
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Electronics
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Exact Sciences And Technology
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Materials Science
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Materials Science, Multidisciplinary
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Methods Of Deposition Of Films And Coatings; Film Growth And Epitaxy
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Microelectronic Fabrication
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Semiconductor Electronics. Microelectronics. Optoelectronics. Solid State Devices
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Elsevier Sciencedirect Journals
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Elsevier
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Backfile Package - Materials Science [Yms]
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Backfile Package - Physics General (Legacy) [Ypa]
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