Distributed electrode Mach-Zehnder modulator with double-pass phase shifters and integrated inductors by Gill, D M, Green, W M J, Xiong, C, Rylyakov, A, Schow, C, Proesel, J, Rosenberg, J C, Barwicz, T, Khater, M, Assefa, S, Shank, S M, Reinholm, C, Kiewra, E, Kamlapurkar, S, Vlasov, Y A

Get full text

In-situ MBE Si as passivating interlayer on GaAs for HfO2 MOSCAP’s: effect of GaAs surface reconstruction by Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.

Get full text

Inversion mode n -channel GaAs field effect transistor with high- k /metal gate by de Souza, J. P., Kiewra, E., Sun, Y., Callegari, A., Sadana, D. K., Shahidi, G., Webb, D. J., Fompeyrine, J., Germann, R., Rossel, C., Marchiori, C.

Get full text

Electromigration in AlCu lines: comparison of Dual Damascene and metal reactive ion etching by Filippi, R.G, Gribelyuk, M.A, Joseph, T, Kane, T, Sullivan, T.D, Clevenger, L.A, Costrini, G, Gambino, J, Iggulden, R.C, Kiewra, E.W, Ning, X.J, Ravikumar, R, Schnabel, R.F, Stojakovic, G, Weber, S.J, Gignac, L.M, Hu, C.-K, Rath, D.L, Rodbell, K.P

Get full text

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers by Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-P., Marchiori, C., Sousa, M., Germann, R.

Get full text

An integrated silicon photonics technology for O-band datacom by Feilchenfeld, N. B., Anderson, F. G., Barwicz, T., Chilstedt, S., Ding, Y., Ellis-Monaghan, J., Gill, D. M., Hedges, C., Hofrichter, J., Horst, F., Khater, M., Kiewra, E., Leidy, R., Martin, Y., McLean, K., Nicewicz, M., Orcutt, J. S., Porth, B., Proesel, J., Reinholm, C., Rosenberg, J. C., Sacher, W. D., Stricker, A. D., Whiting, C., Xiong, C., Agrawal, A., Baker, F., Baks, C. W., Cucci, B., Dang, D., Doan, T., Doany, F., Engelmann, S., Gordon, M., Joseph, E., Maling, J., Shank, S., Tian, X., Willets, C., Ferrario, J., Meghelli, M., Libsch, F., Offrein, B., Green, W. M. J., Haensch, W.

Request full text

Structural and electrical properties of fully strained (In,Ga)As field effect transistors with in situ deposited gate stacks by Marchiori, C., Kiewra, E., Fompeyrine, J., Gerl, C., Rossel, C., Richter, M., Locquet, J.-P., Smets, T., Sousa, M., Andersson, C., Webb, D. J.

Get full text

High-Performance hbox In 0.7 hbox Ga 0.3 hbox As -Channel MOSFETs With High- kappa Gate Dielectrics and alpha -Si Passivation by Sun, Y, Kiewra, E W, de Souza, JP, Bucchignano, J J, Fogel, KE, Sadana, D K, Shahidi, G G

Get full text

A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications by Assefa, S., Shank, S., Green, W., Khater, M., Kiewra, E., Reinholm, C., Kamlapurkar, S., Rylyakov, A., Schow, C., Horst, F., Huapu Pan, Topuria, T., Rice, P., Gill, D. M., Rosenberg, J., Barwicz, T., Min Yang, Proesel, J., Hofrichter, J., Offrein, B., Xiaoxiong Gu, Haensch, W., Ellis-Monaghan, J., Vlasov, Y.

Request full text

Distributed electrode Mach-Zehnder modulator with double-pass phase shifters and integrated inductors by Gill, D. M., Green, W. M. J., Xiong, C., Proesel, J., Rylyakov, A., Schow, C., Rosenberg, J. C., Barwicz, T., Khater, M., Assefa, S., Shank, S. M., Reinholm, C., Kiewra, E., Kamlapurkar, S., Vlasov, Y. A.

Request full text

Monolithic travelling-wave Mach-Zehnder transmitter with high-swing stacked CMOS driver by Gill, D. M., Proesel, J., Xiong, C., Rosenberg, J. C., Khater, M., Barwicz, T., Assefa, S., Shank, S. M., Reinholm, C., Kiewra, E., Ellis-Monaghan, J., Kamlapurkar, S., Green, W. M. J., Vlasov, Y. A.

Request full text

Investigation of FinFET Devices for 32nm Technologies and Beyond by Shang, H., Chang, L., Wang, X., Rooks, M., Zhang, Y., To, B., Babich, K., Totir, G., Sun, Y., Kiewra, E., Ieong, M., Haensch, W.

Request full text

Enhancement-Mode Buried-Channel [Formula Omitted] MOSFETs With High- [Formula Omitted] Gate Dielectrics by Sun, Y, Kiewra, E.W, Koester, S.J, Ruiz, N, Callegari, A, Fogel, K.E, Sadana, D.K, Fompeyrine, J, Webb, D.J, Locquet, J.-P, Sousa, M, Germann, R, Shiu, K.T, rest, S.R

Get full text

Sputtering Behavior and Evolution of Depth Resolution upon Low Energy Ion Irradiation of GaAs by Hopstaken, Marinus J., Pfeiffer, Dirk, Gordon, Michael S., Kiewra, Edward W., Sun, Yanning, Sadana, Devendra K., Topuria, Teya, Rice, Philip M., Ronsheim, Paul, Gerl, Christian, Marchiori, Chiara, Richter, Mirja, Sousa, Marilyne, Fompeyrine, Jean

Get full text

Enhancement-Mode Buried-Channel \hbox \hbox\hbox\hbox\hbox MOSFETs With High- \kappa Gate Dielectrics by Sun, Yanning, Kiewra, E. W., Koester, S. J., Ruiz, N., Callegari, A., Fogel, K. E., Sadana, D. K., Fompeyrine, J., Webb, D. J., Locquet, J.-P., Sousa, M., Germann, R., Shiu, K. T., Forrest, S. R.

Get full text

Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with Hf O 2 gate dielectrics and α - Si ∕ Si O 2 interlayers by Koester, S. J., Kiewra, E. W., Sun, Yanning, Neumayer, D. A., Ott, J. A., Copel, M., Sadana, D. K., Webb, D. J., Fompeyrine, J., Locquet, J.-P., Marchiori, C., Sousa, M., Germann, R.

Get full text

Enhancement-mode buried-channel In0.7Ga0.3As/In0.52Al0.48AsMOSFETs with high-κ gate dielectrics by YANNING SUN, KIEWRA, E. W, SOUSA, M, GERMANN, R, SHIU, K. T, FORREST, S. R, KOESTER, S. J, RUIZ, N, CALLEGARI, A, FOGEL, K. E, SADANA, D. K, FOMPEYRINE, J, WEBB, D. J, LOCQUET, J.-P

Get full text

In-situ MBE Si as passivating interlayer on GaAs for HfO 2 MOSCAP’s: effect of GaAs surface reconstruction by Webb, D.J., Fompeyrine, J., Nakagawa, S., Dimoulas, A., Rossel, C., Sousa, M., Germann, R., Alvarado, S.F., Locquet, J.P., Marchiori, C., Siegwart, H., Callegari, A., Kiewra, E., Sun, Y., De Souza, J., Hoffmann, N.

Get full text

CMOS Scaling Beyond 22 nm Node by Sadana, Devendra, Bedell, Stephen W., De Souza, J. P., Sun, Y., Kiewra, E., Reznicek, A., Adams, T., Fogel, Keith, Shahidi, G. G., Marchiori, C., Webb, D. J., Richter, M., Gerl, C., Sousa, M., Fompeyrine, J., Germann, R.

Get full text

High mobility III-V channel MOSFETs for post-Si CMOS applications by Yanning Sun, Kiewra, E.W., De Souza, J.P., Koester, S.J., Bucchignano, J.J., Ruiz, N., Fogel, K.E., Sadana, D.K., Shahidi, G.G., Fompeyrine, J., Webb, D.J., Sousa, M., Marchiori, C., Germann, R., Shiu, K.T.

Request full text