Search Results - Kim, Gonjun

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  1. 1
    Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes

    Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. I. Plasma source and critical fluxes by Volynets, Vladimir, Barsukov, Yuri, Kim, Gonjun, Jung, Ji-Eun, Nam, Sang Ki, Han, Kyuhee, Huang, Shuo, Kushner, Mark J.

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  2. 2
    Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation

    Role of NO in highly selective SiN/SiO2 and SiN/Si etching with NF3/O2 remote plasma: Experiment and simulation by Barsukov, Yuri, Volynets, Vladimir, Lee, Sangjun, Kim, Gonjun, Lee, Byoungsu, Nam, Sang Ki, Han, Kyuhee

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  3. 3
    Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism

    Highly selective Si3N4/SiO2 etching using an NF3/N2/O2/H2 remote plasma. II. Surface reaction mechanism by Jung, Ji-Eun, Barsukov, Yuri, Volynets, Vladimir, Kim, Gonjun, Nam, Sang Ki, Han, Kyuhee, Huang, Shuo, Kushner, Mark J.

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  4. 4
    Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism

    Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. II. Surface reaction mechanism by Jung, Ji-Eun, Barsukov, Yuri, Volynets, Vladimir, Kim, Gonjun, Nam, Sang Ki, Han, Kyuhee, Huang, Shuo, Kushner, Mark J.

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  5. 5
    Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes

    Highly selective Si 3 N 4 /SiO 2 etching using an NF 3 /N 2 /O 2 /H 2 remote plasma. I. Plasma source and critical fluxes by Volynets, Vladimir, Barsukov, Yuri, Kim, Gonjun, Jung, Ji-Eun, Nam, Sang Ki, Han, Kyuhee, Huang, Shuo, Kushner, Mark J.

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