Search Results - Kim, Hwi-San

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  1. 1
    Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory

    Robust Two-Dimensional Stack Capacitor Technologies for 64 Mbit One-Transistor–One-Capacitor Ferroelectric Random Access Memory by Jung, Ju-Young, Joo, Heung-Jin, Park, Jung-Hoon, Kang, Seung-Kuk, Kim, Hwi-San, Choi, Do-Yeon, Kim, Jai-Hyun, Lee, Eun-Sun, Hong, Young-Ki, Kim, Hyun-Ho, Jung, Dong-Jin, Kang, Young-Min, Lee, Sung-Yung, Jeong, Hong-Sik, Kim, Kinam

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  2. 2
    A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY

    A NOVEL ATE (ADDITIONAL TOP-ELECTRODE) SCHEME FOR A 1.6 V FRAM EMBEDDED DEVICE AT 180 NM TECHNOLOGY by JOO, HEUNG JIN, KANG, SEUNG KUK, PARK, JUNG HOON, KIM, HWI SAN, KIM, JAI-HYUN, JUNG, JU YOUNG, CHOI, DO YEON, LEE, EUN SUN, KANG, YOUNG MIN, LEE, SUNG YUNG, JEONG, HONG SIK, KIM, KINAM

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