A delta-doped amorphous silicon thin-film transistor with high mobility and stability by Kim, Pyunghun, Lee, Kyung Min, Lee, Eui-Wan, Jo, Younjung, Kim, Do-Hyung, Kim, Hong-jae, Yang, Key Young, Son, Hyunji, Choi, Hyun Chul

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Determination of the pion charge form factor for Q^2 = 0.60-1.60 (GeV/c)^2 by Tadevosyan, Vardan, Blok, Henk, Huber, Garth, Abbott, David, Anklin, Heinz, Armstrong, Christopher, Arrington, John, Assamagan, Ketevi, Avery, Steven, Baker, O., Bochna, C., Brash, Edward, Breuer, Herbert, Chant, Nicholas, Dunne, James, Eden, T., Ent, Rolf, Gaskell, David, Gilman, Ronald, Gustafsson, Kenneth, Hinton, Wendy, Jackson, Harold, Jones, Mark, Keppel, Cynthia, Kim, pyunghun, Kim, Wooyoung, Klein, Andreas, Koltenuk, Douglas, Liang, Meihua, Lolos, George, Lung, Allison, Mack, David, McKee, David, Meekins, David, Mitchell, Joseph, Mkrtchyan, Hamlet, Mueller, Robert, Niculescu, Gabriel, Niculescu, Maria-Ioana, Pitz, David, Potterveld, David, Qin, Liming, Reinhold, Joerg, Shin, Ilkyoung, Stepanyan, Stepan, Tang, Liguang, der Meer, Rob van, Vansyoc, Kelley, Westrum, D Van, Volmer, Jochen, Vulcan, William, Wood, Stephen, Yan, Chen, Zhao, Wenxia, Zihlmann, Benedikt

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