Search Results - Kindsmuller, Andreas

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  1. 1
    Assessment of Economic Surplus Generated at the European Balancing Platforms

    Assessment of Economic Surplus Generated at the European Balancing Platforms by Kasper, Ulf, Kindsmuller, Andreas, Steber, David, Remppis, Simon, Schlipf, Dominik, Warsewa, Alexander

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  2. 2
    Theory and experimental verification of configurable computing with stochastic memristors

    Theory and experimental verification of configurable computing with stochastic memristors by Naous, Rawan, Siemon, Anne, Schulten, Michael, Alahmadi, Hamzah, Kindsmüller, Andreas, Lübben, Michael, Heittmann, Arne, Waser, Rainer, Salama, Khaled Nabil, Menzel, Stephan

    Published in Scientific reports
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  3. 3
    A Study of the Electroforming Process in 1T1R Memory Arrays

    A Study of the Electroforming Process in 1T1R Memory Arrays by Son, Seokki, Torre, Camilla La, Kindsmuller, Andreas, Rana, Vikas, Menzel, Stephan

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  4. 4
    Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

    Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films by Rupp, Jonathan A. J., Querré, Madec, Kindsmüller, Andreas, Besland, Marie-Paule, Janod, Etienne, Dittmann, Regina, Waser, Rainer, Wouters, Dirk J.

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  5. 5
    Intrinsic RESET Speed Limit of Valence Change Memories

    Intrinsic RESET Speed Limit of Valence Change Memories by von Witzleben, Moritz, Wiefels, Stefan, Kindsmüller, Andreas, Stasner, Pascal, Berg, Fenja, Cüppers, Felix, Hoffmann-Eifert, Susanne, Waser, Rainer, Menzel, Stephan, Böttger, Ulrich

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  6. 6
    On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices

    On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices by Kindsmüller, Andreas, Meledin, Alexander, Mayer, Joachim, Waser, Rainer, Wouters, Dirk J

    Published in Nanoscale
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  7. 7
    Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode

    Competition between V2O3 phases deposited by one-step reactive sputtering process on polycrystalline conducting electrode by Rupp, J.A.J., Janod, E., Besland, M.-P., Corraze, B., Kindsmüller, A., Querré, M., Tranchant, J., Cario, L., Dittmann, R., Waser, R., Wouters, D.J.

    Published in Thin solid films
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  8. 8
    Volatile HRS asymmetry and subloops in resistive switching oxides

    Volatile HRS asymmetry and subloops in resistive switching oxides by La Torre, Camilla, Kindsmüller, Andreas, Wouters, Dirk J, Graves, Catherine E, Gibson, Gary A, Strachan, John Paul, Williams, R Stanley, Waser, Rainer, Menzel, Stephan

    Published in Nanoscale
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  9. 9
    Volatile HRS asymmetry and subloops in resistive switching oxidesElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr04896c

    Volatile HRS asymmetry and subloops in resistive switching oxidesElectronic supplementary information (ESI) available. See DOI: 10.1039/c7nr04896c by La Torre, Camilla, Kindsmüller, Andreas, Wouters, Dirk J, Graves, Catherine E, Gibson, Gary A, Strachan, John Paul, Williams, R. Stanley, Waser, Rainer, Menzel, Stephan

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  10. 10
    Valence change ReRAMs (VCM) - Experiments and modelling: general discussion

    Valence change ReRAMs (VCM) - Experiments and modelling: general discussion by Aono, Mazakazu, Baeumer, Christoph, Bartlett, Philip, Brivio, Stefano, Burr, Geoffrey, Burriel, Monica, Carlos, Emanuel, Deswal, Sweety, Deuermeier, Jonas, Dittmann, Regina, Du, Hongchu, Gale, Ella, Hambsch, Sebastian, Hilgenkamp, Hans, Ielmini, Daniele, Kenyon, Anthony J, Kiazadeh, Asal, Kindsmüller, Andreas, Kissling, Gabriela, Köymen, Itir, Menzel, Stephan, Pla Asesio, Dolors, Prodromakis, Themis, Santamaria, Monica, Shluger, Alexander, Thompson, Damien, Valov, Ilia, Wang, Wei, Waser, Rainer, Williams, R. Stanley, Wrana, Dominik, Wouters, Dirk, Yang, Yuchao, Zaffora, Andrea

    Published in Faraday discussions
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  11. 11
    Intrinsic RESET speed limit of valence change memories

    Intrinsic RESET speed limit of valence change memories by Moritz von Witzleben, Wiefels, Stefan, Kindsmüller, Andreas, Stasner, Pascal, Berg, Fenja, Cüppers, Felix, Hoffmann-Eifert, Susanne, Waser, Rainer, Menzel, Stephan, Böttger, Ulrich

    Published in arXiv.org
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