Search Results - Knaipp, M

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  1. 1
    Investigations on the high current behavior of lateral diffused high-voltage transistors

    Investigations on the high current behavior of lateral diffused high-voltage transistors by Knaipp, M., Rohrer, G., Minixhofer, R., Seebacher, E.

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  2. 2
    A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration

    A 120V 180nm High Voltage CMOS smart power technology for system-on-chip integration by Minixhofer, R, Feilchenfeld, N, Knaipp, M, Röhrer, G, Park, J M, Zierak, M, Enichlmair, H, Levy, M, Loeffler, B, Hershberger, D, Unterleitner, F, Gautsch, M, Chatty, K, Shi, Y, Posch, W, Seebacher, E, Schrems, M, Dunn, J, Harame, D

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  3. 3
    Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology

    Hot-carrier behaviour and ron-BV trade-off optimization for p-channel LDMOS transistors in a 180 nm HV-CMOS technology by Jong Mun Park, Knaipp, M., Enichlmair, H., Minixhofer, R., Yun Shi, Feilchenfeld, N.

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  4. 4
    Drift design impact on quasi-saturation & HCI for scalable N-LDMOS

    Drift design impact on quasi-saturation & HCI for scalable N-LDMOS by Yun Shi, Feilchenfeld, N., Phelps, R., Levy, M., Knaipp, M., Minixhofer, R.

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  5. 5
    Scalable High Voltage CMOS technology for Smart Power and sensor applications

    Scalable High Voltage CMOS technology for Smart Power and sensor applications by Schrems, M., Knaipp, M., Enichlmair, H., Vescoli, V., Minixhofer, R., Seebacher, E., Leisenberger, F., Wachmann, E., Schatzberger, G., Gensinger, H.

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  6. 6
    Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V

    Investigations on an Isolated Lateral High-Voltage n-channel LDMOS Transistor with a Typical Breakdown of 150V by Knaipp, M., Jong Mun Park, Vescoli, V., Roehrer, G., Minixhofer, R.

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  7. 7
    Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure

    Hydrodynamic modeling of avalanche breakdown in a gate overvoltage protection structure by Knaipp, Martin, Kanert, Werner, Selberherr, Siegfried

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  8. 8
    Hot Carrier Degradation of p-LDMOS Transistors for RF Applications

    Hot Carrier Degradation of p-LDMOS Transistors for RF Applications by Kraft, J., Loffler, B., Knaipp, M., Wachmann, E.

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  9. 9
    FlexRay Transceiver in a 0.35 µm CMOS High-Voltage Technology

    FlexRay Transceiver in a 0.35 µm CMOS High-Voltage Technology by Baronti, F., D'Abramo, P., Knaipp, M., Minixhofer, R., Roncella, R., Saletti, R., Schrems, M., Serventi, R., Vescoli, V.

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  10. 10
    Evolution of a CMOS Based Lateral High Voltage Technology Concept

    Evolution of a CMOS Based Lateral High Voltage Technology Concept by Knaipp, M., Park, J.M., Vescoli, V.

    Published in Microelectronics
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  11. 11
    Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation

    Optimization of Industrial High Voltage Structures by Three-Dimensional Diffusion Simulation by Cervenka, J., Fleischmann, P., Selberherr, S., Knaipp, M., Unterleitner, F.

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  12. 12
    Simulation of Polysilicon Emitter Bipolar Transistors

    Simulation of Polysilicon Emitter Bipolar Transistors by Palankovski, V., Grasser, T., Knaipp, M., Selberherr, S.

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  13. 13
    Development of a high voltage deep trench environment for a Smart Power Technology

    Development of a high voltage deep trench environment for a Smart Power Technology by Knaipp, M., Stueckler, E., Bissmann, W.

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  14. 14
    A Physically Based Substrate Current Simulation

    A Physically Based Substrate Current Simulation by Knaipp, M., Grasser, T., Selberherr, S.

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  15. 15
    Analysis of Leakage Currents in Smart Power Devices

    Analysis of Leakage Currents in Smart Power Devices by Knaipp, M., Simlinger, T., Kanert, W., Selberherr, S.

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