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Search Results - Knopfmacher, O
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Nernst Limit in Dual-Gated Si-Nanowire FET Sensors
by
Knopfmacher, O
,
Tarasov, A
,
Fu, Wangyang
,
Wipf, M
,
Niesen, B
,
Calame, M
,
Schönenberger, C
Published in
Nano letters
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High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization
by
Fu, W
,
Nef, C
,
Tarasov, A
,
Wipf, M
,
Stoop, R
,
Knopfmacher, O
,
Weiss, M
,
Calame, M
,
Schönenberger, C
Published in
Nanoscale
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Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors
by
Tarasov, A.
,
Fu, W.
,
Knopfmacher, O.
,
Brunner, J.
,
Calame, M.
,
Schönenberger, C.
Published in
Applied physics letters
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True Reference Nanosensor Realized with Silicon Nanowires
by
Tarasov, A
,
Wipf, M
,
Bedner, K
,
Kurz, J
,
Fu, W
,
Guzenko, V. A
,
Knopfmacher, O
,
Stoop, R. L
,
Calame, M
,
Schönenberger, C
Published in
Langmuir
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Dual Gated Silicon Nanowire Field Effect Transistors
by
Knopfmacher, O.
,
Keller, D.
,
Calame, M.
,
Schönenberger, C.
Published in
Procedia chemistry
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High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalizationElectronic supplementary information (ESI) available. See DOI: 10.1039/c3nr03940d
by
Fu, W
,
Nef, C
,
Tarasov, A
,
Wipf, M
,
Stoop, R
,
Knopfmacher, O
,
Weiss, M
,
Calame, M
,
Schönenberger, C
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Sensing with liquid-gated graphene field-effect transistors
by
Wangyang Fu
,
Nef, C.
,
Tarasov, A.
,
Wipf, M.
,
Stoop, R.
,
Knopfmacher, O.
,
Weiss, M.
,
Calame, M.
,
Schonenberger, C.
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Conference Proceeding
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Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors
by
Tarasov, A
,
W Fu
,
Knopfmacher, O
,
Brunner, J
,
Calame, M
,
Schönenberger, C
Published in
arXiv.org
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Successions in integer partitions
by
Knopfmacher, Arnold
,
Munagi, Augustine O.
Published in
The Ramanujan journal
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