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Peculiarities of vacancy-related defects formation in Si doped with tin
by
Khirunenko, L.I.
,
Kobzar, O.O.
,
Pomozov, Yu.V.
,
Sosnin, M.G.
,
Tripachko, M.O.
Published in
Physica. B, Condensed matter
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Interstitial-related reactions in silicon doped with isovalent impurities
by
Khirunenko, L.I.
,
Kobzar, O.O.
,
Pomozov, Yu.V.
,
Sosnin, M.G.
,
Tripachko, M.O.
,
Abrosimov, N.V.
,
Riemann, H.
Published in
Physica. B, Condensed matter
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Physica. B, Condensed Matter
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Physical Sciences
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Physics
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Physics, Condensed Matter
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Science & Technology
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Silicon
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Tin
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Germanium
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Interstitial
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Irradiation
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Vacancy
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Elsevier
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Backfile Package - Physics General (Legacy) [Ypa]
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