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Anomalous nanosecond transient component in a GaAs MODFET technology
by
Kaneshiro, R.T.
,
Kocot, C.P.
,
Jaeger, R.P.
,
Kofol, J.S.
,
Lin, B.J.F.
,
Littau, E.
,
Luechinger, H.
,
Rohdin, H.G.
Published in
IEEE electron device letters
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A backside via process for thermal resistance improvement demonstrated using GaAs HBTs
by
Kofol, J.S.
,
Lin, B.J.F.
,
Mierzwinski, M.
,
Kim, A.
,
Armstrong, A.
,
Van Tuyl, R.
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