Search Results - Kold'yaev, V.

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  1. 1
    Rapid non-destructive detection of sub-surface Cu in silicon-on-insulator wafers by optical second harmonic generation

    Rapid non-destructive detection of sub-surface Cu in silicon-on-insulator wafers by optical second harmonic generation by Koldyaev, V., Kryger, M. C., Changala, J. P., Alles, M. L., Fleetwood, D. M., Schrimpf, R. D., Tolk, N.

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  2. 2
    Nonlinear Frenkel and Poole effects

    Nonlinear Frenkel and Poole effects by Kol'Dyaev, V. I.

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  3. 3
    Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness

    Impact of the transmission line properties of a metal-ultrathin silicon dioxide-semiconductor field-effect transistor on the extracted inversion-layer thickness by Kol’dyaev, V. I., Clerix, A., Deferm, L., Van Overstraeten, R.

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  4. 4
    Comprehensive closed-form model for the quantized accumulation layer in MOS structures

    Comprehensive closed-form model for the quantized accumulation layer in MOS structures by Kol'dyaev, V I, Van Den Bosch, G, Deferm, L

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  5. 5
    A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect

    A leakage current model for SOI based floating body memory that includes the Poole-Frenkel effect by Nayfeh, A., Koldyaev, V., Beaud, P., Nagoga, M., Okhonin, S.

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  6. 6
    Modeling kinetics of gate oxide reliability using stretched exponents

    Modeling kinetics of gate oxide reliability using stretched exponents by Krishnan, M.S., Kol'dyaev, V.

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  7. 7
    Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures

    Study of the influence of the nonequilibrium point defect concentration gradient on the dopant flux during ion implantation in silicon at high temperatures by Kol'dyaev, V.I.

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  8. 8
    Nonlinear Frenkel and Poole effects

    Nonlinear Frenkel and Poole effects by Koľdyaev, V. I.

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  9. 9
    Impact of substrate resistivity on the high frequency performance of metal interconnect

    Impact of substrate resistivity on the high frequency performance of metal interconnect by Jenei, S., Kol'dyaev, V., Decoutere, S., Kuhn, R., Deferm, L.

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  10. 10
    Gate Stack Optimisation for Advanced CMOS Process

    Gate Stack Optimisation for Advanced CMOS Process by Kubicek, S., Vandenberghe, G., Schaekers, M., Kold'yaev, V., Jansen, P., Badenes, G., Deferm, L., De Meyer, K., Kerr, D., Naem, A.

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  11. 11
    Closed-Form Frequency Dependent Gate-to-Channel Capacitance Model for Submicron MOSFET's

    Closed-Form Frequency Dependent Gate-to-Channel Capacitance Model for Submicron MOSFET's by Kol'dyaev, V. I., Clerix, A., Deferm, L.

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  12. 12
    A high-accuracy comprehensive high-frequency model of a VLSI spiral inductor

    A high-accuracy comprehensive high-frequency model of a VLSI spiral inductor by Kol'dyaev, V.I., Decoutere, S., Kuhn, R., Deferm, L.

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  13. 13
    Characterisation of the Overlap Capacitance of Submicron LDD MOSFETs

    Characterisation of the Overlap Capacitance of Submicron LDD MOSFETs by Kol'dyaev, V., Clerix, A., Arteaga, R. Murphy, Deferm, L.

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