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    Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping

    Insulating conduction in Sn/Si(111): Possibility of a Mott insulating ground state and metallization/localization induced by carrier doping by Hirahara, Toru, Komorida, Taku, Gu, Yan, Nakamura, Fumitaka, Idzuchi, Hiroshi, Morikawa, Harumo, Hasegawa, Shuji

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