Near-Field Dynamics of Ultra-Wide-Aperture (800 μm) Diode Lasers Under Nanosecond Pulse Excitation by Slipchenko, Sergey O., Podoskin, Aleksandr A., Golovin, Vyacheslav S., Pikhtin, Nikita A., Kop'ev, Petr S.

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Optically pumped quantum-dot Cd(Zn)Se/ZnSe laser and microchip converter for yellow - green spectral region by Lutsenko, E.V., Voinilovich, A.G., Rzheutskii, N.V., Pavlovskii, V.N., Yablonskii, G.P., Sorokin, S.V., Gronin, S.V., Sedova, I.V., Kop'ev, P.S., Ivanov, S.V., Alanzi, M., Hamidalddin, A., Alyamani, A.

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Coherent InAs/CdSe and InAs/ZnTe/CdSe heterovalent interfaces: Electronic and chemical structure by Sedova, Irina V., Lebedev, Mikhail V., Klimko, Grigorii V., Sorokin, Sergey V., Solov'ev, Victor A., Cherkashinin, Gennady, Nappini, Silvia, Magnano, Elena, Drozdov, Mikhail N., Kop'ev, Petr S., Ivanov, Sergey V.

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Plasmon effects in In(Ga)N-based nanostructures by Shubina, Tat'yana V, Ivanov, Sergei V, Toropov, Aleksei A, Kop'ev, Petr S

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Nanoplasmonics and metamaterials(Scientific session of the Division of Physical Sciences, Russian Academy of Sciences, 27 April 2009) by Tikhodeev, Sergei G, Shubina, Tat'yana V, Ivanov, Sergei V, Toropov, Aleksei A, Kop'ev, Petr S, Kurin, Vladislav V, Lagarkov, Andrei N, Sarychev, Andrei K, Gippius, Nikolai A

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InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition by MAXIMOV, M. V, KOCHNEV, I. V, LEDENTSOV, N. N, BIMBERG, D, KOSOGOV, A. O, WERNER, P, GÖSELE, U, SHERNYAKOV, Y. M, ZAITSEV, S. V, GORDEEV, N. YU, TSATSUL'NIKOV, A. F, SAKHAROV, A. V, KRESTNIKOV, I. L, KOP'EV, P. S, ALFEROV, Z. I

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Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition by KOCHNEV, I. V, LEDENTSOV, N. N, RUVIMOV, S. S, WERNER, P, GÖSELE, U, MAXIMOV, M. V, TSATSUL'NIKOV, A. F, SAKHAROV, A. V, VOLOVIK, B. V, KOP'EV, P. S, ALFEROV, Z. I, BIMBERG, D, KOSOGOV, A. O

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Enhanced room-temperature 3.5 µm photoluminescence in stress-balanced metamorphic In(Sb,As)/In(Ga,Al)As/GaAs quantum wells by Chernov, Mikhail Yu, Solov ev, Victor A., Komkov, Oleg S., Firsov, Dmitriy D., Meltser, Boris Ya, Yagovkina, Maria A., Baidakova, Marina V., Kop ev, Petr S., Ivanov, Sergey V.

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Multiple increase in the radiative efficiency of 1060-nm laser diodes based on heterostructures with tunnel-coupled injection and a single waveguide mode by Slipchenko, Sergey, Shashkin, Ilya, Nikolayev, Dmitriy, Shamakhov, Viktor, Podoskin, Aleksandr, Soboleva, Olga, Bakhvalov, Kirill, Kriychkov, Vladislav, Pikhtin, Nikita, Kop'ev, Petr

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Ultrabroad tuning range (100  nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well by Podoskin, Alexandr, Golovin, Vyacheslav, Gavrina, Polina, Veselov, Dmitriy, Zolotarev, Vasiliy, Shamakhov, Viktor, Nikolaev, Dmitrii, Leshko, Andrey, Slipchenko, Sergey, Pikhtin, Nikita, Kopév, Petr

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