Plasma-enhanced atomic layer deposition as a technique for controlling the composition and properties of indium-based transparent conductive oxides by Zered, Matanel, Korchnoy, Valentina, Frey, Gitti L., Eizenberg, Moshe

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Zero temperature coefficient of resistance in back-end-of-the-line compatible titanium aluminum nitride films by atomic layer deposition by Krylov, Igor, Qi, Yuanshen, Korchnoy, Valentina, Weinfeld, Kamira, Eizenberg, Moshe, Yalon, Eilam

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Electrical and structural properties of conductive nitride films grown by plasma enhanced atomic layer deposition with significant ion bombardment effect by Krylov, Igor, Korchnoy, Valentina, Xu, Xianbin, Weinfeld, Kamira, Yalon, Eilam, Ritter, Dan, Eizenberg, Moshe

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Effect of the substrate on structure and properties of titanium nitride films grown by plasma enhanced atomic layer deposition by Krylov, Igor, Xu, Xianbin, Qi, Yuanshen, Weinfeld, Kamira, Korchnoy, Valentina, Eizenberg, Moshe, Ritter, Dan

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Role of temperature on structure and electrical properties of titanium nitride films grown by low pressure plasma enhanced atomic layer deposition by Krylov, Igor, Qi, Yuanshen, Korchnoy, Valentina, Weinfeld, Kamira, Eizenberg, Moshe, Yalon, Eilam

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Properties of conductive nitride films prepared by plasma enhanced atomic layer deposition using quartz and sapphire plasma sources by Krylov, Igor, Xu, Xianbin, Weinfeld, Kamira, Korchnoy, Valentina, Ritter, Dan, Eizenberg, Moshe

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlOx film grown by atomic layer deposition by Lisiansky, Michael, Popov, Inna, Uvarov, Vladimir, Korchnoy, Valentina, Meyler, Boris, Yofis, Svetlana, Shneider, Yacov

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High-voltage metal-insulator-metal capacitor based on crystalline HfAlO x film grown by atomic layer deposition by Lisiansky, Michael, Popov, Inna, Uvarov, Vladimir, Korchnoy, Valentina, Meyler, Boris, Yofis, Svetlana, Shneider, Yacov

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