GaAs resistor structures for X-ray imaging detectors by Ayzenshtat, G.I, Budnitsky, D.L, Koretskaya, O.B, Novikov, V.A, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P, Tyazhev, A.V, Vorobiev, A.P

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Photoelectrical characteristics of as-grown high-resistance GaAs single crystals by Budnitskii, D.L, Koretskaya, O.B, Tolbanov, O.P, Tyazhev, A.V

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GaAs detector material made from 3-inch wafers by Ayzenshtat, G.I., Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Mokeev, D.Y., Okaevich, L.S., Tolbanov, O.P., Tyazhev, A.V.

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GaAs as a material for particle detectors by Ayzenshtat, A.I., Budnitsky, D.L., Koretskaya, O.B., Okaevich, L.S., Novikov, V.A., Potapov, A.I., Tolbanov, O.P., Tyazhev, A.V., Vorobiev, A.P.

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GaAs structures for X-ray imaging detectors by Ayzenshtat, G.I., Bakin, N.N., Budnitsky, D.L., Drugova, E.P., Germogenov, V.P., Khludkov, S.S., Koretskaya, O.B., Okaevich, L.S., Porokhovnichenko, L.P., Potapov, A.I., Smith, K.M., Tolbanov, O.P., Tyazhev, A.V., Vilisova, M.D., Vorobiev, A.P.

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Ionizing-radiation detectors based on GaAs with deep centers by Aizenshtadt, G.I, Kanaev, V.G, Khan, A.V, Khludkov, S.S, Koretskaya, O.B, Potapov, A.I, Okaevich, L.S, Tyazhev, A.V, Tolbanov, O.P

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Investigation of transport and charge collection in particle detectors based on compensated GaAs by Khludkov, S.S, Koretskaya, O.B, Okaevitch, L.S, Potapov, A.I, Tolbanov, O.P

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Transport and charge collection in compensated GaAs particle detectors by Koretskaya, O.B, Okaevich, L.S, Potapov, A.I, Tolbanov, O.P

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Analysis of free-carrier charges distribution in the n-GaAs monocrystals used at formation of the high-resistance material for the ionizing radiation sensors by Budnitsky, D.L., Koretskaya, O.B., Novikov, V.A., Tolbanov, O.P.

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spl beta/- and /spl gamma/-radiation detectors based on GaAs with deep centres by Koretskaya, O.B., Okaevich, L.S., Potapov, A.I., Tolbanov, O.P.

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