Zero-bias tunneling anomaly in a two-dimensional electron system with disorder by Kotel’nikov, I. N., Dizhur, S. E., Morozova, E. N., Devyatov, E. V., Dolgopolov, V. T.

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Scattering involving LO phonons in tunneling to the 2D electron system of a delta layer by Kotel’nikov, I. N., Dizhur, S. E.

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Reflection of electrons during tunneling and an intersubband polaron in the 2D electron system of a delta-layer in GaAs by Dizhur, S. E., Kotel’nikov, I. N., Dizhur, E. M.

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Thermalization length of hot electron–LO-phonon subsystem in heavy-doped n-GaAs by Mordovets, N A, Shul'man, A Ya, Kotel'nikov, I N

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Electron-electron interaction and tunnel density of states at the Fermi level in high-density two-dimensional electron system by Morozova, E N, Kotel'nikov, I N, Dizhur, S E, Deviatov, E V, Dolgopolov, V T

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Intersubband resonance polarons in Al/δ-GaAs tunneling junctions by Kotel’nikov, I. N., Kokin, V. A., Fedorov, Yu. V., Hook, A. V., Talbaev, D. T.

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Reflection of Electrons during Tunneling and an Intersubband Polaron in the 2D Electron System of a Delta-Layer in GaAs by Dizhur, S E, Kotel'nikov, I N, Dizhur, E M

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The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/δ(Si)-GaAs structures by Kotel’nikov, I. N., Dizhur, S. E., Feiginov, M. N., Mordovets, N. A.

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Transition of the near-surface δ layer in an Al/δ(Si)-GaAs tunnel structure to the insulating state under pressure by Dizhur, E. M., Voronovsky, A. N., Fedorov, A. V., Kotel’nikov, I. N., Dizhur, S. E.

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Experimental study of pressure influence on tunnel transport into 2DEG by Dizhur, E.M., Voronovsky, A.N., Kotelnikov, I.N., Dizhur, S.E., Feiginov, M.N.

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Tunneling spectroscopy of the electron exchange-correlation interaction in a Schottky barrier in a quantizing magnetic field: n-GaAs/Me junctions by Shul’man, A. Ya, Kotel’nikov, I. N., Varvanin, N. A., Mirgorodskaya, E. N.

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Effect of electron heating and radiation pressure on tunneling across Schottky barrier due to giant near field of FIR laser radiation by Shul'man, A.Ya, Ganichev, S.D, Dizhur, E.M, Kotel'nikov, I.N, Zepezauer, E, Prettl, W

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The effect of photon energy and temperature on the persistent tunneling photoconductivity effect in Al/{delta}(Si)-GaAs structures by Kotel'nikov, I. N., Dizhur, S. E., Feiginov, M. N., Mordovets, N. A.

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Modified calibration unit for general-purpose digital voltmeters by Kotel'nikov, N. I.

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2D-subband spectra variations under persistent tunneling photoconductivity condition in tunnel delta-GaAs/Al structures by Dizhur, S E, Kotel'nikov, I N, Kokin, V A, Shtrom, F V

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Circuit for checking the E6-3 teraohmmeter by Kotel'nikov, N. I.

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Inertia measurement of TVB thermocouple converters by Kotel'nikov, N. I.

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Pressure Dependence of the Barrier Height in Tunnel n-GaAs/Au Junctions by Dizhur, E.M., Shulman, A.Ya, Kotelnikov, I.N., Voronovsky, A.N.

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Testing of standard cells on the potentiometric installation type U309 by Kotel'nikov, N. I.

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Utilization of tolerances in testing MZ-10 instruments by Kotel'nikov, N. I.

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