Search Results - Kotzea, S

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  1. 1
    High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage

    High-mobility GaN-on-sapphire p-n diodes with near-unity ideality factor and large breakdown voltage by Kotzea, S, Debald, A, Heuken, M, Kalisch, H, Vescan, A

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  2. 2
    Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes

    Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes by Debald, A, Kotzea, S, Ahmadsad, H, Heuken, M, Kalisch, H, Vescan, A

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  3. 3
    First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors

    First monolithic integration of GaN-based enhancement mode n-channel and p-channel heterostructure field effect transistors by Hahn, H., Reuters, B., Kotzea, S., Lukens, G., Geipel, S., Kalisch, H., Vescan, A.

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  4. 4
    Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect

    Extraction of the active acceptor concentration in (pseudo-) vertical GaN MOSFETs using the body-bias effect by Hentschel, R., Wachowiak, A., Großer, A., Kotzea, S., Debald, A., Kalisch, H., Vescan, A., Jahn, A., Schmult, S., Mikolajick, T.

    Published in Microelectronics
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  5. 5
    Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth

    Demonstration of a GaN-Based Vertical-Channel JFET Fabricated by Selective-Area Regrowth by Kotzea, Simon, Debald, Arne, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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  6. 6
    Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates

    Growth and Characterization of Vertical and Lateral p‐n Junctions Formed by Selective‐Area p‐GaN MOVPE on Patterned Templates by Debald, Arne, Kotzea, Simon, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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  7. 7
    GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth

    GaN Micropillar Schottky Diodes with High Breakdown Voltage Fabricated by Selective‐Area Growth by Debald, Arne, Kotzea, Simon, Riedel, Jona, Heuken, Michael, Kalisch, Holger, Vescan, Andrei

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  8. 8
    Comparison of MOCVD and MBE Regrowth for CAVET Fabrication

    Comparison of MOCVD and MBE Regrowth for CAVET Fabrication by Kotzea, Simon, Witte, Wiebke, Godejohann, Birte-Julia, Marx, Mathias, Heuken, Michael, Kalisch, Holger, Aidam, Rolf, Vescan, Andrei

    Published in Electronics (Basel)
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