Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion by Okada, Narihito, Hidaka, Ryota, Kowaki, Taketo, Saito, Takahiro, Sugawara, Yoshihiro, Yokoe, Daisaku, Yao, Yongzhao, Ishikawa, Yukari, Kurai, Satoshi, Yamada, Yoichi, Tadatomo, Kazuyuki

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Effect of the Twist Crystallinity of N‐Polar AlN Underlayer on the Electrical Properties of GaN/AlN Structures by Kowaki, Taketo, Hanasaku, Koki, Miyamoto, Minagi, Zazuli, Aina Hiyama, Inahara, Daisuke, Fujii, Kai, Kimoto, Taisei, Ninoki, Ryosuke, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy by Zazuli, Aina Hiyama, Kowaki, Taketo, Miyamoto, Minagi, Hanasaku, Koki, Inahara, Daisuke, Fujii, Kai, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Growth Mechanism of N‐Polar GaN on Vicinal N‐Polar AlN Templates in Metal‐Organic Vapor Phase Epitaxy by Miyamoto, Minagi, Hanasaku, Koki, Kowaki, Taketo, Inahara, Daisuke, Zazuli, Aina Hiyama, Fujii, Kai, Kimoto, Taisei, Ninoki, Ryosuke, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates by Miyamoto, Minagi, Matsumura, Wataru, Okuno, Ryo, Matsuda, Syunsuke, Hanasaku, Koki, Kowaki, Taketo, Inahara, Daisuke, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Si‐Doping Effects in AlGaN Channel Layer on Performance of N‐Polar AlGaN/AlN FETs by Kowaki, Taketo, Matsumura, Wataru, Hanasaku, Koki, Okuno, Ryo, Inahara, Daisuke, Matsuda, Shunsuke, Kurai, Satoshi, Yao, Yongzhao, Ishikawa, Yukari, Okada, Narihito, Yamada, Yoichi

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Impact of thick N-polar AlN growth on crystalline quality and electrical properties of N-polar GaN/AlGaN/AlN FET by Zazuli, Aina Hiyama, Kowaki, Taketo, Miyamoto, Minagi, Hanasaku, Koki, Inahara, Daisuke, Fujii, Kai, Kimoto, Taisei, Ninoki, Ryosuke, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Investigation of Electrical Properties of N‐Polar AlGaN/AlN Heterostructure Field‐Effect Transistors by Inahara, Daisuke, Matsuda, Shunsuke, Matsumura, Wataru, Okuno, Ryo, Hanasaku, Koki, Kowaki, Taketo, Miyamoto, Minagi, Yao, Yongzhao, Ishikawa, Yukari, Tanaka, Atsushi, Honda, Yoshio, Nitta, Shugo, Amano, Hiroshi, Kurai, Satoshi, Okada, Narihito, Yamada, Yoichi

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Growth and characterization of nitrogen-polar AlGaN/AlN and demonstration of field effect transistor by You, Lu, Matsumura, Wataru, Ataka, Kazuya, Matsuda, Shunsuke, Inahara, Daisuke, Hanasaku, Koki, Okuno, Ryo, Kowaki, Taketo, Yao, Yongzhao, Ishikawa, Yukari, Kurai, Satoshi, Okada, Narihito, Tadatomo, Kazuyuki, Yamada, Yoichi

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