Ohmic contact formation to GaN by Ge+ implantation doping: Implantation fluence and encapsulation layer studies by Kozubal Maciej, A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Monika, Masłyk, Kamińska, Eliana

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Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies by Kozubal, Maciej A., Karolina, Pągowska, Andrzej, Taube, Renata, Kruszka, Iwona, Sankowska, Eliana, Kamińska

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The interplay between damage- and chemical-induced isolation mechanism in Fe+-implanted AlGaN/GaN HEMT structures by Pągowska, Karolina, Kozubal, Maciej, Taube, Andrzej, Kruszka, Renata, Kamiński, Maciej, Kwietniewski, Norbert, Juchniewicz, Marcin, Szerling, Anna

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Highly-doped p-type few-layer graphene on UID off-axis homoepitaxial 4H–SiC by Ciuk, Tymoteusz, Kaszub, Wawrzyniec, Kosciewicz, Kinga, Dobrowolski, Artur, Jagiello, Jakub, Chamryga, Adrianna, Gaca, Jaroslaw, Wojcik, Marek, Czolak, Dariusz, Stanczyk, Beata, Przyborowska, Krystyna, Kozlowski, Roman, Kozubal, Michal, Michalowski, Pawel Piotr, Szary, Maciej Jan, Kaminski, Pawel

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In-situ thin film copper–copper thermocompression bonding for quantum cascade lasers by Rouhi, Sina, Ozdemir, Mehtap, Ekmekcioglu, Merve, Yigen, Serap, Demirhan, Yasemin, Szerling, Anna, Kosiel, Kamil, Kozubal, Maciej, Kruszka, Renata, Prokaryn, Piotr, Ertugrul, Mehmet, Reno, John L., Aygun, Gulnur, Ozyuzer, Lutfi

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Flexible IGZO Schottky diodes on paper by Kaczmarski, Jakub, Borysiewicz, Micha A, Piskorski, Krzysztof, Wzorek, Marek, Kozubal, Maciej, Kami ska, Eliana

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The use of high-mass clusters to measure the TOF SIMS profiles of implanted bismuth by Trzyna, Małgorzata, Berchenko, Nicolas, Jakieła, Rafał, Dziawa, Piotr, Kozubal, Maciej, Cebulski, Jozef

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Compositional, structural, and optical properties of atomic layer deposited tantalum oxide for optical fiber sensor overlays by Kosiel, Kamil, Pągowska, Karolina, Kozubal, Maciej, Guziewicz, Marek, Lawniczak-Jablonska, Krystyna, Jakieła, Rafał, Syryanyy, Yevgen, Gabler, Tomasz, Śmietana, Mateusz

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Ion implantation for isolation of AlGaN/GaN HEMTs using C or Al by Taube, Andrzej, Kamińska, Eliana, Kozubal, Maciej, Kaczmarski, Jakub, Wojtasiak, Wojciech, Jasiński, Jakub, Borysiewicz, Michał A., Ekielski, Marek, Juchniewicz, Marcin, Grochowski, Jakub, Myśliwiec, Marcin, Dynowska, Elżbieta, Barcz, Adam, Prystawko, Paweł, Zając, Marcin, Kucharski, Robert, Piotrowska, Anna

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(Invited) Manufacturing Microwave AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Truly Bulk Semi-Insulating GaN Substrates by Piotrowska, Anna Barbara, Kaminska, Eliana Anetka, Wojtasiak, Wojciech, Gwarek, Wojciech, Kucharski, Robert, Zajac, Marcin, Prystawko, Pawel, Kruszewski, Piotr, Ekielski, Marek, Kaczmarski, Jakub, Kozubal, Maciej, Trajnerowicz, Artur, Taube, Andrzej

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Electrical isolation of GaAs and AlGaAs/GaAs Quantum Cascade Lasers by deep hydrogen implantation by Kozubal, Maciej Artur, Szerling, Anna, Kosiel, Kamil, Myśliwiec, Marcin, Pągowska, Karolina, Jakieła, Rafał, Kruszka, Renata, Guziewicz, Marek, Barcz, Adam

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Ion implantation for semiconductor lasers by Szerling, Anna, Kozubal, Maciej, Gebski, Marcin, Pagowska, Karolina, Michalowski, Pawel, Kosiel, Kamil, Ekielski, Marek, Czyszanowski, Tomasz

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