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GaN-Based Light Emitting Diodes with Tunnel Junctions
by
Takeuchi, Tetsuya
,
Hasnain, Ghulam
,
Corzine, Scott
,
Hueschen, Mark
,
Jr, Richard P. Schneider
,
Kocot, Chris
,
Blomqvist, Mats
,
Chang, Ying-lan
,
Lefforge, Dale
,
Krames, Mike R.
,
Cook, Lou W.
,
Stockman, Steve A.
Published in
Japanese Journal of Applied Physics
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Articles
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Journal Title
Japanese Journal Of Applied Physics
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Japanese Journal Of Applied Physics Part 2-Letters
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Japanese Journal Of Applied Physics, Part 2: Letters
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Jpn.j.appl.phys ,Part 2. Vol. 40, No. 8B, Pp. L861-L863. 2001
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Subjects
Hole Injection
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1
Led
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1
Mg-Doped Ingan
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Physical Sciences
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Physics
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Physics, Applied
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Science & Technology
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Si-Doped Gan
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Tunnel Junction
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Vcsel
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Institute Of Physics Iopscience Extra
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