Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation by Evtikhiev, V P, Boiko, A M, Kudryashov, I V, Kryganovskii, A K, Suris, R A, Titkov, A N, Tokranov, V E

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Formation of InSb quantum dots in a GaSb matrix by Tsatsul’Nikov, A. F., Ivanov, S. V., Kop’Ev, P. S., Kryganovskii, A. K., Ledentsov, N. N., Maximov, M. V., Mel’Tser, B., Nekludov, P. V., Suvorova, A. A., Titkov, A. N., Volovik, B. V., Grundmann, M., Bimberg, D., Alferov, Zh. I.

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Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [0 1 0] direction by Evtikhiev, V.P., Tokranov, V.E., Kryganovskii, A.K., Boiko, A.M., Suris, R.A., Titkov, A.N.

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Effect of GaAs(0 0 1) surface misorientation on the emission from MBE grown InAs quantum dots by Kudryashov, I.V, Evtikhiev, V.P, Tokranov, V.E, Kotel'nikov, E.Yu, Kryganovskii, A.K, Titkov, A.N

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Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy by Tsatsul'nikov, A.F, Ivanov, S.V, Kop'ev, P.S, Krestnikov, I.L, Kryganovskii, A.K, Ledentsov, N.N, Maximov, M.V, Mel'tser, B.Ya, Nekludov, P.V, Suvorova, A.A, Titkov, A.N, Volovik, B.V, Grundmann, M, Bimberg, D, Alferov, Zh.I

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Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation by EVTIKHIEV, V. P, BOIKO, A. M, KUDRYASHOV, I. V, KRYGANOVSKII, A. K, SURIS, R. A, TITKOV, A. N, TOKRANOV, V. E

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Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction by EVTIKHIEV, V. P, TOKRANOV, V. E, KRYGANOVSKII, A. K, BOIKO, A. M, SURIS, R. A, TITKOV, A. N

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Formation of InSb quantum dots in a GaSb matrix by TSATSUL'NIKOV, A. F, IVANOV, S. V, VOLOVIK, B. V, GRUNDMANN, M, BIMBERG, D, ALFEROV, Zh. I, KOP'EV, P. S, KRYGANOVSKII, A. K, LEDENTSOV, N. N, MAXIMOV, M. V, MEL'TSER, B. Ya, NEKLUDOV, P. V, SUVOROVA, A. A, TITKOV, A. N

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Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots by KUDRYASHOV, I. V, EVTIKHIEV, V. P, TOKRANOV, V. E, KOTEL'NIKOV, E. Yu, KRYGANOVSKII, A. K, TITKOV, A. N

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Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy by TSATSUL'NIKOV, A. F, IVANOV, S. V, TITKOV, A. N, VOLOVIK, B. V, GRUNDMANN, M, BIMBERG, D, ALFEROV, Zh. I, KOP'EV, P. S, KRESTNIKOV, I. L, KRYGANOVSKII, A. K, LEDENTSOV, N. N, MAXIMOV, M. V, MEL'TSER, B. Y, NEKLUDOV, P. V, SUVOROVA, A. A

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Structural characterization and strain relaxation in porous GaN layers by Mynbaeva, M., Titkov, A., Kryganovskii, A., Ratnikov, V., Mynbaev, K., Huhtinen, H., Laiho, R., Dmitriev, V.

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Ambient AFM observations of the crater formation in InAs quantum dots on GaAs (001) vicinal surfaces after evaporation in UHV by Nakamura, A., Titkov, A.N., Ichida, M., Evtikhiev, V.P., Kryganovskii, K.

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