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Search Results - Kudara, Ken
Search Results - Kudara, Ken
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High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
by
Kudara, Ken
,
Imanishi, Shoichiro
,
Hiraiwa, Atsushi
,
Komatsuzaki, Yuji
,
Yamaguchi, Yutaro
,
Kawamura, Yoshifumi
,
Shinjo, Shintaro
,
Kawarada, Hiroshi
Published in
IEEE transactions on electron devices
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Over 1 A/mm drain current density and 3.6 W/mm output power density in 2DHG diamond MOSFETs with highly doped regrown source/drain
by
Kudara, Ken
,
Arai, Masakazu
,
Suzuki, Yukiko
,
Morishita, Aoi
,
Tsunoda, Jun
,
Hiraiwa, Atsushi
,
Kawarada, Hiroshi
Published in
Carbon (New York)
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MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
by
Liu, Benjian
,
Bi, Te
,
Fu, Yu
,
Kudara, Ken
,
Imanishi, Shoichiro
,
Liu, Kang
,
Dai, Bing
,
Zhu, Jiaqi
,
Kawarada, Hiroshi
Published in
IEEE transactions on electron devices
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L-Band Diamond Amplifier With Multi-Finger Structure
by
Kudara, Ken
,
Komatsuzaki, Yuji
,
Yamaguchi, Yutaro
,
Shinjo, Shintaro
,
Arai, Masakazu
,
Kawarada, Hiroshi
Published in
IEEE electron device letters
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Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
by
Imanishi, Shoichiro
,
Kudara, Ken
,
Ishiwata, Hitoshi
,
Horikawa, Kiyotaka
,
Amano, Shotaro
,
Iwataki, Masayuki
,
Morishita, Aoi
,
Hiraiwa, Atsushi
,
Kawarada, Hiroshi
Published in
IEEE electron device letters
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High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al 2 O 3
by
Kudara, Ken
,
Imanishi, Shoichiro
,
Hiraiwa, Atsushi
,
Komatsuzaki, Yuji
,
Yamaguchi, Yutaro
,
Kawamura, Yoshifumi
,
Shinjo, Shintaro
,
Kawarada, Hiroshi
Published in
IEEE transactions on electron devices
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Drain bias dependence of Y 22 and Y 21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors
by
Oishi, Toshiyuki
,
Takada, Shiori
,
Kudara, Ken
,
Yamaguchi, Yutaro
,
Shinjo, Shintaro
,
Yamanaka, Koji
Published in
Japanese Journal of Applied Physics
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Drain bias dependence of Y22 and Y21 signals at low frequency for on-state conditions in AlGaN/GaN high electron mobility transistors
by
Oishi, Toshiyuki
,
Takada, Shiori
,
Kudara, Ken
,
Yamaguchi, Yutaro
,
Shinjo, Shintaro
,
Yamanaka, Koji
Published in
Japanese Journal of Applied Physics
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Ieee Transactions On Electron Devices
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Ieee Electron Device Letters
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Japanese Journal Of Applied Physics
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Carbon
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Field Effect Transistors
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5
Mosfets
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5
Science & Technology
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Semiconductor Devices
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Diamonds
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Logic Gates
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Mosfet
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Physical Sciences
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Technology
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Two Dimensional Hole Gas
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Atomic Layer Epitaxy
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Electrodes
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Engineering
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Engineering, Electrical & Electronic
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Metal Oxide Semiconductors
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Chemical Vapor Deposition
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Backfile Package - Materials Science [Yms]
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