Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n +-Si-SiO2-n-Si heterostructures by Zhdan, A. G., Kukharskaya, N. F., Naryshkina, V. G., Chucheva, G. V.

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The effect of imaging forces in ultra thin gate insulator on the tunneling current and its oscillations at the region of transition from the direct tunneling to the Fowler–Nordheim... by Goldman, E.I., Kukharskaya, N.F., Zhdan, A.G.

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Manifestation of excess centers of electron-hole pair generation resulting from field and thermal stresses and their subsequent annihilation in dynamic current-voltage characterist... by Goldman, E. I., Kukharskaya, N. F., Narishkina, V. G., Chucheva, G. V.

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Determination of the Minority Carrier Surface Thermogeneration Rate in Metal-Oxide-Semiconductor Structures by Chucheva, G. V., Zhdan, A. G., Akhmedov, G. A., Kukharskaya, N. F.

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Improving the Accuracy in Determining the Insulator Capacitance in Metal–Insulator–Semiconductor Structures by Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.

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Determination of the absolute value of the semiconductor surface potential by the quasi-static capacitance-voltage characteristics of an MIS structure by Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.

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Determining the thermal generation rate of minority charge carriers at semiconductor-ultrathin oxide interfaces by Goldman, E. I., Kukharskaya, N. F., Naryshkina, V. G., Chucheva, G. V.

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Reconstruction of the potential profile in an insulating layer using current-voltage characteristics of tunneling MIS diodes by Goldman, E. I., Zhdan, A. G., Kukharskaya, N. F., Chernyaev, M. V.

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Ion neutralization effects at a semiconductor-insulator interface produced as a result of space-charge thermal depolarization of MOS structures by Goldman, E. I.

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Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures by Gol’dman, E. I., Zhdan, A. G., Kukharskaya, N. F., Chucheva, G. V.

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Reconstruction of dependences of the tunneling current on the oxide voltage using the dynamic current-voltage characteristics of the n{sup +}-Si-SiO{sub 2}-n-Si heterostructures by Zhdan, A. G., Kukharskaya, N. F., Naryshkina, V. G., Chucheva, G. V.

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Improvements in the Quasi-static Capacitance–Voltage Characterization of Semiconductor–Insulator Interface States (Si/SiO 2 ) by Gulyaev, I. B., Zhdan, A. G., Kukharskaya, N. F., Tikhonov, R. D., Chucheva, G. V.

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