Search Results - Kwakman, L. F. Tz

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  1. 1
    Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation

    Developments on a SEM-based X-ray tomography system: Stabilization scheme and performance evaluation by Gomes Perini, L. A., Bleuet, P., Filevich, J., Parker, W., Buijsse, B., Kwakman, L. F. Tz

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  2. 2
    Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation

    Si amorphization by focused ion beam milling: Point defect model with dynamic BCA simulation and experimental validation by Huang, J., Loeffler, M., Muehle, U., Moeller, W., Mulders, J.J.L., Kwakman, L.F.Tz, Van Dorp, W.F., Zschech, E.

    Published in Ultramicroscopy
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  3. 3
    Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations

    Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations by Clément, L., Pantel, R., Kwakman, L. F. Tz, Rouvière, J. L.

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  4. 4
    Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source

    Static time-of-flight secondary ion mass spectrometry analysis of microelectronics related substrates using a polyatomic ion source by Ravanel, X., Trouiller, C., Juhel, M., Wyon, C., Kwakman, L.F.Tz, Léonard, D.

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  5. 5
    Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates

    Quantitative static Time-of-Flight Secondary Ion Mass Spectrometry analysis of anionic minority species in microelectronic substrates by Ravanel, X., Trouiller, C., Juhel, M., Wyon, C., Kwakman, L.F.Tz, Léonard, D.

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  6. 6
    Analytical transmission electron microscopy observation of aluminium–tungsten interaction in thermally stressed Al/Ti/W/TiN interconnections

    Analytical transmission electron microscopy observation of aluminium–tungsten interaction in thermally stressed Al/Ti/W/TiN interconnections by Pantel, R, Wehbe-Alause, H, Jullian, S, Kwakman, L.F.Tz

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  7. 7
    SIMS depth profiling of boron ultra shallow junctions using oblique O 2 + beams down to 150 eV

    SIMS depth profiling of boron ultra shallow junctions using oblique O 2 + beams down to 150 eV by Juhel, M., Laugier, F., Delille, D., Wyon, C., Kwakman, L.F.Tz, Hopstaken, M.

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  8. 8
    Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source

    Fragmentation of molecular compounds on silicon wafers and low dielectric constant materials studied by time-of-flight secondary ion mass spectrometry using a polyatomic ion source by Ravanel, X., Trouiller, C., Juhel, M., Wyon, C., Kwakman, L. F. T., Léonard, D.

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  9. 9
    Formation of negative hydrogen ions on a cesiated W(110) surface; the influence of hydrogen implantation

    Formation of negative hydrogen ions on a cesiated W(110) surface; the influence of hydrogen implantation by VAN AMERSFOORT, P. W, GEERLINGS, J. J. C, KWAKMAN, L. F. T, HERSHCOVITCH, A, GRANNEMAN, E. H. A, LOS, J

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  10. 10
    Combined XRR and RS Measurements of Nickel Silicide Films

    Combined XRR and RS Measurements of Nickel Silicide Films by Gonchond, J.-P., Cacho, F., Wyon, C., Rolland, G., Braeckelmann, G., Kwakman, L.F.Tz, Tsach, Y., Agnihotri, D.K., Formica, J.P.

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  11. 11
    SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150 eV

    SIMS depth profiling of boron ultra shallow junctions using oblique O2+ beams down to 150 eV by JUHEL, M, LAUGIER, F, DELILLE, D, WYON, C, KWAKMAN, L. F. Tz, HOPSTAKEN, M

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    Conference Proceeding
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  12. 12
    Quantification of Si sub(3)N sub(4) LPCVD inhibition on oxide surfaces

    Quantification of Si sub(3)N sub(4) LPCVD inhibition on oxide surfaces by Kwakman, L F Tz, Lindow, E J, Granneman, E H A, Martin, F, Veler, J C, Joly, J P

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  13. 13
    Charge and energy transfer in collisions of Cs+ ions with a cesiated W(110) surface

    Charge and energy transfer in collisions of Cs+ ions with a cesiated W(110) surface by VAN AMERSFOORT, P. W, GEERLINGS, J. J. C, KWAKMAN, L. F. T, GRANNEMAN, E. H. A, LOS, J

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